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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1956-1961 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article the magneto-optics of magneto-optical (M-O) layered structures have been studied theoretically and experimentally. For the air/M-O/air configuration, an analytic expression between the apparent complex Faraday rotation and the eigenvalue φ˜F=e1φ˜F′ can be obtained, when the M-O layers are semitransparent and weakly magnetic. The interference factor e1 is a function of the optical constants and the M-O layer thickness d, and the light wavelength. In these structures, the apparent Faraday rotation consists of two parts. One oscillates as a function of the M-O layer thickness and the other is proportional to the layer thickness. The oscillation period and the amplitude are determined by the optical constants of the M-O layers. For the air/M-O/reflector configuration, the Kerr rotation φ˜k oscillates as a function of the M-O layer thickness and approaches a constant as the thickness d→∞. If the M-O layers are semitransparent and weakly magnetic, the apparent Kerr rotation can be expressed as φ˜k=e2φ˜F′. For ultrathin metallic magnetic bilayered films the Kerr rotation is proportional to the M-O layer thickness and the enhancement factor is a function of the optical constants of the M-O layer and NM reflector. The magneto-optics of a Co spinel ferrite film, Co/Cu, Fe-Ni/Cu, and Co/Si structures have been studied experimentally. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3122-3132 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of superconducting (Bi,Pb)2Sr2Ca2Cu3O10–Ag (2223) tapes have been measured using synchrotron x-ray scattering techniques. The x-ray photon energy was tuned just below the silver K absorption edge so the penetration depth was large, which allowed the measurements to be performed in a transmission geometry without removing the silver cladding. Analysis of the peaks in 2θ scans indicates that residual (Bi,Pb)2Sr2CaCu2O8 (2212) superconductor starting material is present in all samples studied. The amount of 2212 varied widely among the tapes, and was not homogeneous along the length of each individual tape. Residual 2212 content increased near the ends of most samples, suggesting that 2223 phase development is sensitive to whether the superconducting material is encased in silver or not. The bulk c-axis alignment was measured in ∼100 mono- and multifilament samples, and correlations between c-axis alignment and current carrying capacity at 77 K were found. Multifilament samples generally had better alignment than monofilament samples. The c-axis alignment along the length of the tapes was uniform, and the superconducting material within ∼1 μm of the Ag was better textured than the bulk of the sample. Intermediate pressings were directly shown to have an adverse affect on c-axis alignment. Finally, the evolution of texture and phase development was examined in a series of samples annealed for varying times. The 2212 starting material acquired the final c-axis alignment state after brief heating times, and only after much longer heating times did the 2212 transform into the 2223 phase. These results and their implications for improving processing procedures are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 439-441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polar Kerr rotation spectra of Fe-SiO2 granular films were measured at room temperature in the wavelength region between 400 nm and 850 nm. A maximum Kerr rotation angle (θk) of 18 min was obtained when a magnetic field of 10 kOe was applied perpendicular to the film plane. We have measured θk as a function of Fe volume fraction (fv) of the films. It was found that θk increases with increasing fv and peaks at fv≈0.4. We also found that θk decreases as the Fe particle size increases. Our results indicate that the density of Fe particles and the interfaces between Fe particles and SiO2 matrix may play an important role in the Kerr rotation of granular films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 722-730 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study has been made of the xerographic properties of amorphous selenium doped with chlorine at concentrations below 100 parts per million (ppm) by weight. The sample consisted, in each case, of an aluminum plate with a thin deposited rf sputtered aluminum oxide film, on which a 50 μm layer of amorphous selenium was deposited by evaporation, at a substrate temperature of 50 °C. It was found that the chlorine decreased the acceptance voltage following corona charging, increased the dark decay rate, and decreased the residual voltage after illumination discharge. The changes were such as to be beneficial xerographically for small additions of chlorine to the selenium in the ppm range. Analysis of the time derivative of the dark decay voltage indicated that depletion discharge was the dominant process in the decrease of dark decay voltage with time and a modified relation was introduced to describe the increase of bulk space-charge density with time, arising from thermal excitation of holes from deep discrete centers in the photoreceptor. This analysis indicated a decrease of the release time of the holes with increase of chlorine content, whereas an observed decrease of single cycle and cycled-up residual voltages with increased chlorine indicated an increase of hole capture time from their relevant trapping centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6398-6401 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts of the ac susceptibility of high-Tc superconductor HgBa2Ca2Cu3O8+x were measured as a function of temperature in different ac fields and frequencies at a fixed dc field. The current-density dependence of activation energy was obtained in terms of nonlinear diffusion equation of vortices. The relaxation of the current density and the exponent μ of the glassy phase were deduced from the relation between the activation energy and the current density. In addition, the pinning energy and critical current density were estimated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4154-4158 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2538-2540 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new two-color n-type GaAs/AlAs/AlGaAs double barrier quantum well (DBQW) and bound-to-miniband GaAs/AlGaAs quantum well infrared photodetector (QWIP) with photovoltaic (PV) and photoconductive (PC) dual-mode operation in the 3–5 and 8–14 μm atmospheric spectral windows has been demonstrated in this work. It consists of a stack of the midwavelength infrared (MWIR) QWIP and the long-wavelength infrared (LWIR) QWIP. The PV detection scheme uses transition from the ground bound state to the first quasi-bound excited state for the MWIR-QWIP. The PC detection scheme has two different transitions, one identical to the PV mode detection scheme while the other uses transition from the ground bound state to the miniband state of the superlattice barrier LWIR-QWIP. The peak responsivity for the PV mode was found to be 17 mA/W at λp=4.1 μm and T=50 K with a bandwidth Δλ/λp=15%. The peak responsivities for the PC mode were found to be 25 mA/W at λp=4.1 μm, Vb=1.0 V, and 0.12 A/W at λp=11.6 μm, Vb=3.2 V, and at T=50 K, with a bandwidth Δλ/λp=18%. The PV responsivity was found to be 68% of the PC responsivity at λp=4.1 μm and T=50 K, demonstrating the ability for efficient PV mode operation at 3–5 μm by using the DBQW structure. This is the highest ratio reported for the spectral region of 3–5 μm wavelength with a DBQW structure.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2699-2705 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the InAs layer as the blocking layer into the GaSb side of the GaSb/AlSb/InAs single-barrier interband tunneling structure resulting in a GaSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structure has been proven to greatly enhance negative differential resistance peak-to-valley current ratios and peak current density. The role of the InAs layer induced electron and light hole coupling related to the device performance is then investigated. A three-band model, incorporating the coupling effect of the spin-orbit split-off hole band, is employed to probe the effect of the InAs layer thickness on the peak current densities and the subband properties of the GaSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. The calculated peak current densities are in reasonable agreement with the experimental data reported previously. The transmission coefficients based on the three-band calculation can be used to interpret the variations of the peak current densities well. In addition, the "repulsion'' of the conduction subbands in the InAs well and light-hole subbands in the GaSb well is observed for larger InAs layer thickness. A "transition energy region'' resulting from the crossing of the respective subbands in the InAs and GaSb wells is also observed. The effect of the InAs layer induced subband properties related to the carrier transport in the peak current of the GaSb/InAs/GaSb/AlSb/InAs structure is also discussed.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2026-2028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnSe epilayers have been successfully grown on a Ge (311) substrate by molecular beam epitaxy. Reflection high energy electron diffraction indicated antiphase domain free growth. The x-ray diffraction rocking curve demonstrated a full width at half maximum as narrow as 198 arcsec, which is the narrowest linewidth reported to date for a ZnSe/Ge heteroepitaxy. Our results indicate that ZnSe/Ge heterostructures are promising for optoelectronic device applications.
    Type of Medium: Electronic Resource
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  • 20
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the temperature dependence of the magnetic properties and interface magnetism of Co/Pt multilayers. The magnetic properties including magnetization and anisotropy change substantially as the temperature varies from 300 to 10 K for samples with Co layer thickness in the range from 3 to 7 A(ring). The interface anisotropy of about 0.38 erg/cm2 is nearly independent of temperature. The magnetization reversal is dominated by domain wall motion for the thinner Co layers and dominated by nucleation for the thicker Co layers.
    Type of Medium: Electronic Resource
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