Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodes (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1131-1134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the properties of (InGa)As/GaAs strained-layer superlattices (SLSs) that have been disordered by implantation of 5×1015/cm2, 250 keV 64Zn+ followed by controlled atmosphere annealing at 680 °C for 30 min. Ion channeling techniques indicate that the Zn-disordered regions of the SLS contain extensive crystalline damage after annealing. Simulations of the disordering process using an analytic ion range code predict that the electrical junction resulting from the implantation process is located outside the disordered region of the SLS in both the vertical and the lateral directions. Junction electroluminescence intensity for given drive current densities from the Zn-disordered SLS devices is comparable to that from reference Be-implantation-doped (SLS retained) devices and greatly exceeds that from heavily dislocated grown-junction mesa diodes in the homogeneous alloy of the average SLS composition; this result is consistent with the results of the simulations. This study demonstrates that implantation disordering can be as useful for strained-layer systems as for less severely mismatched heterojunction systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337356
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Tl-Ca-Ba-Cu-O step-edge Josephson junctions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1141-1143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There has been considerable progress in the development of nonhysteretic Josephson junction microelectronic technologies for YBaCuO. Such a technology for Tl-Ca-Ba-Cu-O junctions would be interesting because of the higher operating temperatures and the very different grain boundary structures in the different cuprate superconductors. We have successfully made step-edge junctions with TlCaBaCuO grown on ion-milled LaAlO3. Nonhysteretic grain boundary-based junctions have been demonstrated with critical current-normal state resistance products exceeding 5 mV at 77 K, critical current densities ranging from 500 to 25 000 A/cm2, and critical current versus field profiles suggesting very uniform junctions. Yield has exceeded 70% on over 250 junctions tested and operation has been demonstrated to 100 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107458
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Fabrication of TlCaBaCuO step-edge Josephson junctions with hysteretic behavior (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1013-1015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One way to create hysteretic Josephson junctions from the currently available nonhysteretic high temperature superconducting junctions is to artificially add capacitance. We have adapted a multilayer technique for artificial capacitance addition/grain boundary modification to produce TlCaBaCuO step-edge junctions exhibiting large amounts of hysteresis at 77 K. A gaplike structure is present at 32–36 mV that has a temperature dependence that does not contradict that predicted by the Bardeen-Cooper-Schrieffer theory. In addition, the junctions show fast switching times, less than a fixture limited 20 ps, and Fraunhofer-like dependence of critical current on magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106506
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Thermodynamically stable p-channel strained-layer AlGaAs/InGaAs/GaAs heterostructure field effect transistor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device characteristics of a thermodynamically stable p-channel, strained quantum-well heterostructure field effect transistor (HFET) are reported. The AlGaAs/InGaAs/GaAs material system was used to fabricate the p-channel HFETs with Al and In mole fractions of 0.20 and 0.18, respectively. Transconductances of 32 and 94 mS/mm were achieved at 300 and 77 K, respectively, for devices with 1.2 μm recessed gates. These numbers are comparable to InGaAs quantum-well, recessed gate pHFETs whose quantum-well thicknesses exceed the thermodynamic stability limit. These results have important implications for high performance self-aligned devices which require high-temperature processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112220
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...