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  • 1
    Electronic Resource
    Electronic Resource
    A Monte Carlo model for trapped charge distribution in electron-irradiated α-quartz (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6859-6865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The space dependence of charge carriers trapped in α-quartz under electron-beam bombardment is investigated using a Monte Carlo algorithm. The average energy of the electron after being detrapped from a trap site is first calculated by considering both the polar and nonpolar phonon scatterings. Later, the detrapping and trapping rates are also included in the model to obtain a stable trapped charge distribution, which is found to be dependent on the size as well as the temperature of the sample. Comparisons with experimental results of the size effect on the dielectric strength obtained from a scanning electron microscope are also made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355087
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  • 2
    Electronic Resource
    Electronic Resource
    Charge trapping on different cuts of a single-crystalline α-SiO2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1944-1948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354778
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  • 3
    Electronic Resource
    Electronic Resource
    Variation of trapping/detrapping properties as a function of the insulator size (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1960-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the scanning electron microscope we have investigated the physical parameters determining the size effect of various dielectric samples submitted to a surface electric field. It is shown that the size effect is a function of the static permittivity and of the space charge distribution. The results are explained by the consideration of charge diffusion and polarization relaxation processes resulting from the space charge formation. A one-dimensional mathematical model has also been used to describe space charge distribution. The findings were consistent with the experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354780
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  • 4
    Electronic Resource
    Electronic Resource
    Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1250-1255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (tt) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354928
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1−xFexO3 (x=0–0.12) thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7410-7412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline La0.7Sr0.3Mn1−xFexO3 thin films, with x=0–0.12, have been prepared on (001)-Si substrates using pulsed laser deposition. The films consist of fine grains with an average size of 60–80 nm. For those films, the metal–insulator transition temperature, Tp, is much lower than the Curie temperature, TC. The high field magnetoresistance, HFMR, is nearly temperature independent for x〈0.08, whereas the extrapolated low field magnetoresistance at zero field, LFMR*, decreases rapidly with increasing temperature. Moreover, Fe doping significantly decreases LFMR* and enhances HFMR at low temperatures. We propose that for the Fe-doped films, both the reduced spin polarization of conduction electrons and the increased spin-flip scattering are responsible for the decrease of LFMR*, while the weakened ferromagnetic spin interaction at the grain boundaries is responsible for the enhanced HFMR. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358344
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in Ag-doped granular La2/3Sr1/3MnO3 thin films prepared by dual-beam pulsed-laser deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7428-7430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report our investigations on the doping effect metallic Ag on the intergrain magnetoresistance phenomenon. La2/3Sr1/3MnO3 (LSMO) thin films with Ag doping were prepared on (001) LaAlO3 at different substrate temperatures (Ts) by the dual-beam pulsed-laser deposition technique. Grown at Ts=750 °C, the films are perfectly epitaxial with their c axis perpendicular to the film surface. Ag dopant cannot substitute into the LSMO lattice, thus showing no obvious effect on the magnetotransport properties of the film, though it did impair the film in-plane epitaxy and improve the intergrain diffusion of the lattice atoms. However, grown at lower Ts(400 °C), the films are granular with c-axis texture. The Ag dopant exists at GBs and helps to increase the local Mn spin disorder at GBs and the phase interfaces, thus enhancing the eMR value by a factor of 2 compared with the undoped film. Experiment data also suggest that the transport mechanism underlying the Ag-doping enhanced eMR is spin-dependent scattering. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362660
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxy barium ferrite thin films on LiTaO3 substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2191-2195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barium hexaferrite (BaM) thin films were deposited on (0001) LiTaO3 substrates by pulsed laser deposition. Effects of the substrate temperature and oxygen gas pressure on the formation and quality of these films were studied. Films deposited at a substrate temperature of 800 °C and an oxygen pressure around 0.23 mbar showed the best c axis normal to the film plane with locked in-plane orientation. The saturation magnetization Ms and anisotropy field Ha measured by vibrating sample magnetometer were almost the same as those reported on bulk barium ferrite. Decreasing oxygen pressure hinders the formation of the Ba layer in BaM magnetoplumbite structure and gives rise to the spinel phase, which greatly decreases coercivity Hc of the films and finally destroys the whole BaM structure. Effects of the lattice mismatch and substrate-induced strains on the film structure were also studied. It was found that barium ferrite thin films grown on LiTaO3 substrates tend to choose a matching mode with compressional strains rather than shear strains. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371029
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  • 8
    Electronic Resource
    Electronic Resource
    Molecular dynamics study of pressure-induced transition in MgF2 (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 3240-3245 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The pressure-induced structural phase transition of MgF2 is studied for the first time by constant-pressure molecular dynamics. Our results demonstrate the transformation from low symmetry rutile structure to CaF2-type structure under high pressure, which is in agreement with the experimental observation. Details of atomic configurations evolving with pressure have been examined and a mechanism for the rutile-flourite transition has been proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464096
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  • 9
    Electronic Resource
    Electronic Resource
    Dependence of pulsed-laser deposition parameters on the microstructure and magnetic property of Nd–Fe–B thin films grown at high substrate temperature (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4666-4671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We systematically studied the dependencies of substrate temperature, laser fluence, deposition time, ambient gas pressure and laser frequency on the structural and magnetic properties of Nd–Fe–B thin films synthesized by pulsed-laser deposition at high substrate temperature Ts. A coercive force of 2.0–2.4 kOe was obtained on samples with a thickness of 70–90 nm and an average grain size of 50–70 nm grown at Ts of 620–650 °C. We showed a clear trend through statistical analysis that the coercivity decreases with increasing film thickness up to 800 nm due to an increase in the crystalline grain size. Oxidation layer and defects on the grain surface may also have greatly reduced the nucleation field and thus resulted in a low coercivity and low saturation magnetization of the samples. Comparison of the films made by PLD and sputtering under similar conditions has been discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448893
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of Fe doping on the magnetotransport properties in Nd0.67Sr0.33MnO3 manganese oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 789-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed magnetic and transport measurements on a series of Nd0.67Sr0.33Mn1−xFexO3 polycrystalline compounds with x=0.0, 0.05, 0.10, and 0.15. For the Fe-undoped Nd0.67Sr0.33MnO3 (NSMO) materials, a magnetoresistance (MR) as high as ∼33% was observed at the metal–insulator transition temperature, Tp=273 K, in a magnetic field of 10 kOe. Fe substitution in Mn sites leads to a reduction in Tp and an increase in the overall MR. A 10% Fe contribution increases the MR up to about 65% and lowers Tp to 88 K. The calculated magnetic moment at 5 K and an applied field at 9 T for the parent NSMO is 4.21 μB and decreases continuously with an increasing amount of iron added. It was found that with the same amount of Fe doping, the Curie temperature, TC, decreases much faster in the Nd-based system than in the corresponding La-based system. The enhanced colossal magnetoresistance and the suppression of ferromagnetism observed in this compound can be interpreted as due to the weakening of the double exchange mechanism by Fe3+ ions, which causes the localization of the hopping electrons. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421044
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