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  • 1
    Electronic Resource
    Electronic Resource
    Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 109-111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subpicosecond wavelength-degenerate differential transmission optical spectroscopy was used to characterize the electron capture time in a 10-period InxGa1−xN multiple-quantum-well (MQW) structure. Photoluminescence and photoluminescence excitation spectroscopies demonstrated enhanced MQW emission for injection within ±50 meV of the barrier energy. Time-resolved differential transmission measurements for excitation in this region reveal efficient electron capture in the quantum wells with a time constant between 310 and 540 fs. A slower exponential relaxation, with strongly wavelength-dependent subnanosecond decay constants, is also observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126893
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3188-3190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature absorption coefficient and ordinary refractive index for a ∼0.4-μm-thick p-type wurtzite Al0.09Ga0.91N epitaxial layer were determined via optical transmission measurements. The layer was grown by metal organic chemical vapor deposition and heavily doped (∼5×1019 cm−3) with Mg. Additional measurements of the refractive index by prism coupling to the layer confirmed the transmission results. The low-temperature AlN buffer layer altered the expected interference fringes of the transmission spectrum below the band-gap energy and had to be accounted for in the analysis. The absorption coefficient exhibited band-tail effects and had a reduced slope near band-gap energy as compared to undoped GaN. Using a detailed balance argument, the reduced slope was consistent with the lack of a peak in the continuous-wave photoluminescent emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124102
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Systematic measurement of AlxGa1−xN refractive indices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4103-4105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dispersion of the ordinary and extraordinary indices of refraction have been measured systematically for wurtzitic AlxGa1−xN epitaxial layers with 0.0≤x≤1.0 throughout the visible wavelength region. The dispersion, measured by a prism coupling waveguide technique, is found to be well described by a Sellmeier relation. Discrepancies among previous measurements of refractive index dispersion, as a consequence of different growth conditions and corresponding band gap bowing parameter, are reconciled when the Sellmeier relation is parameterized not by x but by band gap energy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426270
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    Paper (German National Licenses)
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