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  • 1
    Electronic Resource
    Electronic Resource
    Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dispersion of the ordinary and extraordinary indices of refraction for wurtzite AlxGa1−xN epitaxial layers with x=0.00, 0.04, 0.08, 0.11, and 0.20 in the range of wavelengths 457〈λ〈980 nm were measured via a prism-coupled waveguide technique. The quantitative accuracy of x is ±10% and the accuracy of the refractive indices is ∼±0.01. The dispersion is found to be well described by a 1st-order Sellmeier dispersion formula. A simple functional form is presented that allows calculation of the refractive indices as functions of x and λ. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124278
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 109-111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subpicosecond wavelength-degenerate differential transmission optical spectroscopy was used to characterize the electron capture time in a 10-period InxGa1−xN multiple-quantum-well (MQW) structure. Photoluminescence and photoluminescence excitation spectroscopies demonstrated enhanced MQW emission for injection within ±50 meV of the barrier energy. Time-resolved differential transmission measurements for excitation in this region reveal efficient electron capture in the quantum wells with a time constant between 310 and 540 fs. A slower exponential relaxation, with strongly wavelength-dependent subnanosecond decay constants, is also observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126893
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  • 3
    Electronic Resource
    Electronic Resource
    Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3188-3190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature absorption coefficient and ordinary refractive index for a ∼0.4-μm-thick p-type wurtzite Al0.09Ga0.91N epitaxial layer were determined via optical transmission measurements. The layer was grown by metal organic chemical vapor deposition and heavily doped (∼5×1019 cm−3) with Mg. Additional measurements of the refractive index by prism coupling to the layer confirmed the transmission results. The low-temperature AlN buffer layer altered the expected interference fringes of the transmission spectrum below the band-gap energy and had to be accounted for in the analysis. The absorption coefficient exhibited band-tail effects and had a reduced slope near band-gap energy as compared to undoped GaN. Using a detailed balance argument, the reduced slope was consistent with the lack of a peak in the continuous-wave photoluminescent emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124102
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  • 4
    Electronic Resource
    Electronic Resource
    Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1196-1203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical-field profiles in wide-band-gap AlxGa1−xN/InxGa1−xN multiple-quantum well (MQW) separate-confinement heterostructure (SCH) laser diodes (LDs) were calculated using a 2×2 transfer-matrix approach that accommodates complex refractive indices. The refractive indices of AlxGa1−xN and InxGa1−xN were approximated by shifting the refractive index of GaN according to the band-gap energy of the solid solution. Current LDs were analyzed and show reasonable optical confinement. Optimization of the SCH waveguide for a three MQW active region was performed by varying the waveguide and cladding layer thicknesses. For 0.8μm thick Al0.10Ga0.90N cladding layers, waveguides on sapphire and SiC substrates had a maximum confinement factor of ∼3.3%. Layers outside of the waveguide strongly affected the optical field for thin (∼0.4 μm) cladding layer thicknesses and resulted in resonant coupling of the light out of the waveguide. Sapphire substrates were found to enhance light confinement, while SiC substrates were found to reduce optical confinement as the cladding layer thickness is reduced. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368185
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