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  • 1
    Electronic Resource
    Electronic Resource
    Erratum:"Focused ion beam stimulated deposition of aluminum from trialkylamine alanes'' [J. Appl. Phys. 68, 4820 (1990)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4152-4152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348978
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  • 2
    Electronic Resource
    Electronic Resource
    Focused ion beam stimulated deposition of aluminum from trialkylamine alanes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4820-4824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam stimulated deposition of aluminum from trimethylamine alane, a white solid, and triethylamine alane, a colorless liquid, is reported. Initiation of growth on Si and SiO2 substrates is enhanced by in situ sputter cleaning of the surface with the Ga+ beam prior to introduction of the metallo-organic. Alternatively gas phase chemical activation with a silane coupling agent can enhance nucleation. Uniform nucleation on Al surfaces does not require any pretreatment. The Al features are electrically conducting, but incorporation of C and N from the amines leads to a resistivity approximately 300 times that of bulk Al. A qualitative model is presented that describes the balance condition for net material deposition as opposed to sputtering in terms of precursor flux and sticking probability as well as ion beam current density and beam scanning parameters. Film morphology and composition are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346140
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  • 3
    Electronic Resource
    Electronic Resource
    Stochastic scattering in charged particle projection systems: A nearest neighbor approach (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6888-6902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Image blurring as a result of stochastic particle–particle interactions has been investigated for projection electron- and ion-beam lithography systems. A comparative analysis of the currently available analytical theories is presented. The results from these theories are also compared with Monte Carlo simulation results and experimental data. Large variations in results and serious disagreements between the different theoretical approaches are found. We have formulated a new theory on the basis of a simple, analytical approach that overcomes most of the difficulties experienced by earlier theories with two key concepts: consideration of nearest-neighbor interactions only, and a randomization length, over which the interactions are correlated. Our model displays satisfactory functional and numerical agreement with Monte Carlo simulation results over a large range of beam currents, as well as with the only available experimental data. The physical basis of our model also enables us to understand the origins of the discrepancies arising from earlier theories. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360455
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  • 4
    Electronic Resource
    Electronic Resource
    Buried-heterostructure lasers fabricated by in situ processing techniques (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1864-1866 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl2 etching. Base laser structures and overgrowth were carried out by atmospheric pressure metalorganic vapor phase epitaxy. The resulting lasers have low-threshold currents of ∼62 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104042
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  • 5
    Electronic Resource
    Electronic Resource
    High-resolution patterning of high Tc superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 495-497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a 20 keV Ga focused ion beam to pattern superconducting submicrometer bridge structures in thin films of Ba2YCu3O7 material by physical sputtering. The technique can produce structures down to 0.5 μm or less in epitaxial films with no degradation in superconducting transition temperature (Tc) or critical current density (Jc). Photolithography was used to define a coarse pattern of 20-μm-wide and 50-μm-long strips, each wired for four-terminal resistance measurements. Submicrometer constrictions were then milled by the focused ion beam to form weak-link junctions with roughly 0.3 μm separating the superconducting banks. We have demonstrated that focused ion beam micromachining is capable of producing submicrometer-sized superconducting structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102429
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  • 6
    Electronic Resource
    Electronic Resource
    Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1478-1480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of thin semiconductor layers as etch masks for high vacuum lithography is described. Heteroepitaxial layers of In0.53Ga0.47As or InP, as thin as 30 A(ring), were grown by molecular beam epitaxy and patterned using a focused beam of Ga ions. The Ga ion beam exposure is very rapid, since only a small amount of the mask material needs to be removed, and readily produces features with submicron sizes. The patterned thin layer can then be used as a mask for deep, material selective etching. The feasibility of selective dry etching of InP based compounds is discussed. This combination of molecular beam epitaxy and efficient precision patterning techniques is expected to result in a new flexibility in design and fabrication of semiconductor devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99104
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  • 7
    Electronic Resource
    Electronic Resource
    Vacuum lithography for in situ fabrication of buried semiconductor microstructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a complete lithographic process combining focused ion beam writing, dry etching, and molecular beam epitaxy for in situ preparation of buried InP-based microstructures. A focused ion beam is used to locally remove an ultrathin oxide imaging layer grown in situ on the surface of InP. The pattern is transferred into the underlying semiconductor by free Cl2 etching with the patterned oxide layer acting as an etch mask. After removal of the oxide mask, GaInAs/InP heterostructures with excellent morphology and high luminescence efficiency can be grown on the patterned substrate. The entire process of mask formation, lithography, and regrowth can be carried out in situ repeatedly, and used for creating fully buried microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104082
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  • 8
    Electronic Resource
    Electronic Resource
    In situ pattern formation and high quality overgrowth by gas source molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1463-1465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a combination of focused Ga beam writing and dry etching techniques to pattern InP wafers in a common vacuum chamber. Surface steps on the order of 1000 A(ring) can be efficiently prepared using moderate Ga ion fluences. The implanted areas exhibit a faster etch rate, even for Ga doses below ∼1014 cm−2. The implantation damage is removed by the low-energy Cl-assisted ion beam etching as shown by the high quality of p-n junctions grown on etched surfaces. GaInAs/InP heterostructures grown on in situ patterned substrates show excellent morphology and high luminescence efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101377
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  • 9
    Electronic Resource
    Electronic Resource
    Cross coupled cavity semiconductor laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 767-769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel monolithic coupling scheme in which three or four active waveguides interact interferometrically to form a multicavity semiconductor laser is demonstrated. The coupling between perpendicular waveguides is obtained by an integrated beamsplitter. Frequency selection, tunability, and single mode operation are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99333
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  • 10
    Electronic Resource
    Electronic Resource
    Role of native oxide layers in the patterning of InP by Ga ion beam writing and ion beam assisted Cl2 etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 749-751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanism of increased etch rate induced in InP substrates by focused Ga ion implantation and Cl2 etching. We cannot account for the depth of surface steps formed in this process with a purely kinetic mechanism. The preferential etching of implanted areas is attributed instead to local modification or removal of native oxides from the surface of InP. The thin oxide layer effectively protects the substrate and inhibits Cl2 etching. Consistent with the thermodynamic prediction, a cleaned InP(100) surface is etched by Cl2 (5×10−4 Torr) with a rate of approximately 1000 A(ring)/min at 200 °C. Surface steps as deep as 3 μm have been reproducibly prepared using an oxide mask believed to be approximately 20 A(ring) thick. In the etching process, any substrate damage caused by the Ga beam writing is completely removed. The oxide mask, which can be patterned on a very fine scale by energetic particle bombardment, provides a new avenue for in situ processing of InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102701
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