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  • 1
    Electronic Resource
    Electronic Resource
    Stochastic scattering in charged particle projection systems: A nearest neighbor approach (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6888-6902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Image blurring as a result of stochastic particle–particle interactions has been investigated for projection electron- and ion-beam lithography systems. A comparative analysis of the currently available analytical theories is presented. The results from these theories are also compared with Monte Carlo simulation results and experimental data. Large variations in results and serious disagreements between the different theoretical approaches are found. We have formulated a new theory on the basis of a simple, analytical approach that overcomes most of the difficulties experienced by earlier theories with two key concepts: consideration of nearest-neighbor interactions only, and a randomization length, over which the interactions are correlated. Our model displays satisfactory functional and numerical agreement with Monte Carlo simulation results over a large range of beam currents, as well as with the only available experimental data. The physical basis of our model also enables us to understand the origins of the discrepancies arising from earlier theories. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360455
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-beam direct-write mechanisms in palladium acetate films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1403-1410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd features have been fabricated by high-energy ion irradiation (2-MeV He+, 2-MeV Ne+, and 20-keV Ga+ ions) of thin palladium acetate films. 2-MeV He+ irradiation produces smooth metallic-looking features that contain up to 30% of the original carbon and 5% of the original oxygen content of the film. Films irradiated with 2-MeV Ne+ ions contain slightly lower amounts of carbon and oxygen residues, but the films' appearance varied with thickness. Exposures made with a 20-keV Ga+ ion beam, focused to a 0.2-μm spot, produce features with carbon and oxygen contents higher than those found with He+ and Ne+ exposures. Heating the ion-beam-defined palladium features in a hydrogen ambient reduces the carbon and oxygen contents and improves the electrical conductivity. Decomposition mechanisms and comparisons with laser direct writing are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344444
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  • 3
    Electronic Resource
    Electronic Resource
    Ion beam damage-induced masking for photoelectrochemical etching of III-V semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4012-4014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation damage has been used as a mask for patterning III-V semiconductors by photoelectrochemical etching. The damage inhibits etching and the optical absorption of the semiconductor prevents light from penetrating through the damaged layer. Patterns of ion implantation damage have been produced on the surface of InP, InGaAs, and InGaAsP by implantation of 50 and 150-keV Be+ ions through a photoresist mask and with a focused beam of 20-keV Ga+ ions. Subsequent photoelectrochemical etching produces surface relief features corresponding to the damage pattern. The effect of the electrolyte and the spectral composition of the light on the resolution are described. Micron size features have been delineated and the technique may be preferable to alternate masking methods (metallization or projection) in certain applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337525
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  • 4
    Electronic Resource
    Electronic Resource
    Focused ion beam stimulated deposition of aluminum from trialkylamine alanes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4820-4824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam stimulated deposition of aluminum from trimethylamine alane, a white solid, and triethylamine alane, a colorless liquid, is reported. Initiation of growth on Si and SiO2 substrates is enhanced by in situ sputter cleaning of the surface with the Ga+ beam prior to introduction of the metallo-organic. Alternatively gas phase chemical activation with a silane coupling agent can enhance nucleation. Uniform nucleation on Al surfaces does not require any pretreatment. The Al features are electrically conducting, but incorporation of C and N from the amines leads to a resistivity approximately 300 times that of bulk Al. A qualitative model is presented that describes the balance condition for net material deposition as opposed to sputtering in terms of precursor flux and sticking probability as well as ion beam current density and beam scanning parameters. Film morphology and composition are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346140
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  • 5
    Electronic Resource
    Electronic Resource
    Lateral thickness modulation of InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 630-632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InGaAs quantum wells (QW), lattice matched to InP, with spatially modulated thickness along the [01¯1¯] direction of the crystal. Kinetic roughening alters the morphology of the underlying InP buffer layer and leads to the modulation of the well thickness. Photoluminescence (PL) emission reveals two distinct peaks, corresponding to excitons bound to well sections of different thicknesses. Comparison of PL spectra of 10 and 40 A(ring) QW samples at different temperatures clearly indicates carrier confinement in the thicker well section. This effect is potentially useful for the preparation of quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355800
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum:"Focused ion beam stimulated deposition of aluminum from trialkylamine alanes'' [J. Appl. Phys. 68, 4820 (1990)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4152-4152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348978
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  • 7
    Electronic Resource
    Electronic Resource
    Vacuum lithography for in situ fabrication of buried semiconductor microstructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a complete lithographic process combining focused ion beam writing, dry etching, and molecular beam epitaxy for in situ preparation of buried InP-based microstructures. A focused ion beam is used to locally remove an ultrathin oxide imaging layer grown in situ on the surface of InP. The pattern is transferred into the underlying semiconductor by free Cl2 etching with the patterned oxide layer acting as an etch mask. After removal of the oxide mask, GaInAs/InP heterostructures with excellent morphology and high luminescence efficiency can be grown on the patterned substrate. The entire process of mask formation, lithography, and regrowth can be carried out in situ repeatedly, and used for creating fully buried microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104082
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  • 8
    Electronic Resource
    Electronic Resource
    Buried-heterostructure lasers fabricated by in situ processing techniques (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1864-1866 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl2 etching. Base laser structures and overgrowth were carried out by atmospheric pressure metalorganic vapor phase epitaxy. The resulting lasers have low-threshold currents of ∼62 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104042
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  • 9
    Electronic Resource
    Electronic Resource
    In situ pattern formation and high quality overgrowth by gas source molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1463-1465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a combination of focused Ga beam writing and dry etching techniques to pattern InP wafers in a common vacuum chamber. Surface steps on the order of 1000 A(ring) can be efficiently prepared using moderate Ga ion fluences. The implanted areas exhibit a faster etch rate, even for Ga doses below ∼1014 cm−2. The implantation damage is removed by the low-energy Cl-assisted ion beam etching as shown by the high quality of p-n junctions grown on etched surfaces. GaInAs/InP heterostructures grown on in situ patterned substrates show excellent morphology and high luminescence efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101377
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  • 10
    Electronic Resource
    Electronic Resource
    Cross coupled cavity semiconductor laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 767-769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel monolithic coupling scheme in which three or four active waveguides interact interferometrically to form a multicavity semiconductor laser is demonstrated. The coupling between perpendicular waveguides is obtained by an integrated beamsplitter. Frequency selection, tunability, and single mode operation are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99333
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