ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electronic properties of ultrathin films of Bi2(Sr,Ca)3Cu2Ox, successively formed on MgO(100) at a substrate temperature of 673 K using atomic layering deposition of metals followed by oxidation with a 8×10−7 Torr NO2 are studied. It was revealed that the film formed at 673 K showed a semiconductive property, whereas the film annealed at 1093 K with 760 Torr O2 shows a superconducting transition with the onset Tc of 90 K and the zero-resistance Tc of 40 K. Optical absorption and x-ray diffraction studies indicate that the electronic structure of Bi2(Sr,Ca)3Cu2Ox ultrathin film changes from charge-transfer type semiconductor to a superconductor with an in-gap band, due to the increase in carrier concentration caused by annealing with O2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107130
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