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  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of superconducting Ba2DyCu3O6.5 thin films at 420 °C using NO2 as an oxidant (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1971-1973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A superconducting Ba2DyCu3O6.5 (orthorhombic II phase) thin film is formed on a MgO(100) substrate at 420 °C by molecular beam epitaxial growth using NO2 as an oxidant. Metal elements Ba, Dy, and Cu are sequentially supplied from K cells onto MgO(100) at 420 °C under a flow of 5×10−5 Pa of NO2. The film gradually cooled in situ under the identical pressure of NO2 shows metallic behavior in the normal state and a Tczero of 50 K. The lattice constant of the c axis is observed at 11.75 A(ring), which is known as an orthorhombic II phase of bulk Ba2DyCu3O6.5. Due to the slow deposition rate, the film thus formed is oriented with the c axis perpendicular to the surface in spite of the low-temperature growth condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108333
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Surface reactions at the controlled structure of SrTiO3(001) (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 412-416 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The surface structures and reactions on the single domained surfaces of SrTiO3(001) are investigated using MBE and various surface characterization techniques, such as RHEED, UPS and XPS. The selective formation of the two types of SrTiO3(001) surfaces, the TiO2 terminated and the SrO terminated surfaces, was carried out by Bi deposition/desorption cleaning method and Sr deposition, followed by oxidation in the NO2 atmosphere. It is shown that both surfaces have increased atomic distance between the first and the second layers, and the outward displacement of the first layer oxygen atoms. Surface reaction of H2O was investigated in relation to the Ti3+ defects formed by Ar+ bombardment, with the aim of obtaining knowledge on the reaction between surface functional groups and organometallic compounds at the well-ordered surfaces.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220189
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Simulation of Energy Distribution for Scanning X-ray Probe (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 202-208 
    Details
    ISSN: 0142-2421
    Keywords: diffraction ; elliptical mirror ; energy distribution ; Fermi edge ; monochromator ; optical ray tracing ; rocking curve ; scanning x-ray probe ; simulation ; XPS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The energy distribution of a scanning x-ray probe which is equipped with an elliptical mirror monochromator has been simulated with optical ray tracing, a numerically described energy distribution of Al Kα x-ray and a rocking curve. The rocking curve was estimated by dynamic diffraction theory with structure factors for quartz. The peak energy of the diffracted x-ray beam did not change with beam size, although the shapes of energy distribution were found to change slightly. Using the simulated x-ray energy distribution and the apparatus function, the energy width of the Fermi edge was simulated, which is to be compared with that obtained experimentally by monochromatic Al Kα x-ray excitation. The widths of the silver Fermi edge spectra were measured with different x-ray beam sizes. In addition, the relation between the x-ray beam position on the anode and the diffracted x-ray energy distribution was investigated. The peak energy of the diffracted x-ray beam was found to move with the x-ray beam position. It is shown that this kind of simulation can be effectively used for estimating the energy distribution and the intensity distribution of the diffracted x-ray beam. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 4
    Electronic Resource
    Electronic Resource
    Quantitative XPS analysis of SiNx(:H) films using simple methods without sputtering (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 222-226 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The use of Ar ion sputtering to remove the native surface oxide on SiNx(:H) is known to cause underestimation of its N/Si ration in XPS or AES analysis owing to preferential sputtering. We have carried out an XPS analysis of the N/Si ratio of plasma-enhanced chemical vapour deposition SiNx:H (x 〈1.5) films using two simple methods without sputtering. In the first method samples were analysed with no surface treatment. In the second method the surface oxide was removed by chemical etching with HF solution. Curve fitting of Si 2p spectra was carried out to remove the influence of the surface oxide in both methods. There were good linearities between the N/Si ratios obtained by these methods and those estimated by RBS and absorption edge measurement. In particular, after correction for an error caused by differences in the attenuation length of photoelectrons, both methods proved to give results of sufficiently high precision for practical analysis.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190143
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    Paper (German National Licenses)
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