ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Erbium-doped a-Si:H films are prepared by magnetron sputtering of a Si-Er target at a deposition temperature of 200 °C. The films are then subjected to cumulative thermal annealing. A sharp increase (∼50-fold) in the photoluminescence intensity at a wavelength of 1.54 µm is observed after a 15-min anneal at 300 °C in a nitrogen atmosphere. At an anneal temperature ⩾500 °C the photoluminescence signal decreases essentially to zero. The influence of thermal annealing processes is discussed in the context of the model of partial transformation of the structural network of amorphous a-Si(Er):H films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187654
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