ISSN:
1432-0630
Keywords:
61.80
;
34
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The effects of implantation-induced radiation damage on the thermal oxidation of cobalt have been studied. Bombardment by both Co+ self-ions and by Xe+ has been studied as a function of ion dose, energy and annealing temperature. A major increase in oxidation was observed for doses of 〉1016 Co+ cm−2 in agreement with previous studies on Al. The oxidation behaviour as a function of annealing temperature was markedly different for Co+ and Xe+ bombarded samples. For Co+ bombarded samples, damage anneals rapidly in the temperature range 20–300°C due to thermally assisted repair of point defects and vacancy clusters. However, for Xe+ bombardment, it is proposed that the higher annealing temperatures required for damage repair arise due to the stabilisation of three-dimensional vacancy clusters by the oversized Xe atoms. The increase in oxidation after annealing in the temperature range 300–500°C is thought to be due to vacancy release mechanisms which may affect oxide nucleation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00620637
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