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Characterization of a-C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopy (1996)

Clay, K. J. ; Speakman, S. P. ; Amaratunga, G. A. J. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 7227-7233

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Optical emission spectra (OES) from CH4/N2 rf plasmas, which are used for the deposition of nitrogen-containing hydrogenated amorphous carbon (a-C:H:N) thin films, have been characterized. Previously unidentified spectral lines have been assigned to atomic N. Further identified species include CH, H, H2, N2, N+2, N, and CN. Variations between spectra from the pure CH4 or N2 plasmas and the mixed CH4/N2 plasma are discussed. The enhancement of excited nitrogen species, with the addition CH4, is attributed to Penning ionization. The observed OES variations of the CH4/N2 plasma with power, pressure, and CH4/N2 ratio are explained in terms of possible reaction mechanisms and their activation, and correlated with preliminary film growth characteristics. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.361439

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Digitale Medien

Characterization of PECVD deposited silicon oxynitride thin films

Speakman, S. ; Read, P. ; Kiermasz, A.

Amsterdam : Elsevier

Vacuum 38 (1988), S. 183-188

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ISSN: 0042-207X

Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Thema: Maschinenbau , Physik

Materialart: Digitale Medien

URL: http://linkinghub.elsevier.com/retrieve/pii/0042-207X(88)90176-5

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Radiation damage and annealing studies of ion bombarded cobalt (1984)

Speakman, S. P. ; Collins, R. A. ; Dearnaley, G.

Springer

Applied physics 35 (1984), S. 99-102

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ISSN: 1432-0630

Schlagwort(e): 61.80 ; 34

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The effects of implantation-induced radiation damage on the thermal oxidation of cobalt have been studied. Bombardment by both Co+ self-ions and by Xe+ has been studied as a function of ion dose, energy and annealing temperature. A major increase in oxidation was observed for doses of 〉1016 Co+ cm−2 in agreement with previous studies on Al. The oxidation behaviour as a function of annealing temperature was markedly different for Co+ and Xe+ bombarded samples. For Co+ bombarded samples, damage anneals rapidly in the temperature range 20–300°C due to thermally assisted repair of point defects and vacancy clusters. However, for Xe+ bombardment, it is proposed that the higher annealing temperatures required for damage repair arise due to the stabilisation of three-dimensional vacancy clusters by the oversized Xe atoms. The increase in oxidation after annealing in the temperature range 300–500°C is thought to be due to vacancy release mechanisms which may affect oxide nucleation.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00620637

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