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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1423-1428 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The presence of oxygen in silicon-germanium can have a significant effect on the sintering, microstructural, and transport properties of these alloys. A neutron activation study was performed to follow the total oxygen content during the preparation of mechanically alloyed n-type Si-20 at. % Ge alloys using either fine powders, polycrystalline Czochralski chunk, or single-crystal float zoned starting materials. The alloys were prepared with a nominal composition of Si0.747Ge0.187(GaP)0.016P0.034. The total oxygen concentration was measured in the starting materials, after 6 h of mechanical alloying in a helium environment, after hot pressing, and after a 3 h, 1100 °C heat treatment in fused silica ampoules. Alloys that contained oxygen levels in excess of 2.0 at. % exhibited low carrier mobility and low thermal conductivity, whereas those that contained less than 0.6 at. % oxygen possessed high mobility and thermal conductivity. The microstructure, as observed by optical metallography and scanning electron microscopy, was found to differ greatly with oxygen content as the low oxygen alloys showed relatively large, well-defined grains and the high oxygen alloys showed evidence of poor sintering and limited grain growth.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5187-5195 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rare earth selenides, based on the composition (Nd0.5Gd0.5)Se1.50−x where 0.005≤x≤0.030, were prepared by vapor phase reaction, melting, and hot pressing. The transport properties of electrical resistivity, Seebeck coefficient, and thermal diffusivity were characterized between 300 and 1300 K. In addition, carrier concentration and mobility were measured at 300 K. Chemical composition and homogeneity were determined on several samples by electron microprobe and atomic emission spectroscopy. Partial substitution of Nd for Gd was found to stabilize the high temperature gamma (Th3P4-type) phase. This system is characterized by a low thermal conductivity, the temperature dependence of which indicates mixed scattering. Analysis of the Seebeck and carrier concentration data by a single band conduction model suggests the existence of a heavy electron band, responsible for the large thermopower in this system. Electrical resistivity and Seebeck coefficient data were combined in a Jonker analysis to determine a maximum power factor, (S2/ρ), of 5.4 μW/cm °C2, corresponding to a resistivity of 5.5 Ω cm and a Seebeck coefficient of −172.3 μV/°C. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 9 (1961), S. 316-321 
    ISSN: 1520-5118
    Quelle: ACS Legacy Archives
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Inorganic chemistry 10 (1971), S. 2676-2679 
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7899-7906 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical resistivity, thermoelectric power (Seebeck coefficient), Hall effect, and thermal conductivity have been measured in Cux(Dy2S3)1−x compounds with the η-orthorhombic structure in the composition range 0.006≤x≤0.15 in order to determine their potential as high temperature (300–1000 °C) thermoelectric materials. In this temperature and composition range Cu-doped Dy2S3 behaves as a degenerate semiconductor and shows itinerant conduction. The electrical resistivity and the Seebeck coefficient increased with increasing temperature and reach a maximum value of 4.35–7.13 mΩ cm and −163 to −177 μV/°C, respectively, depending upon the Cu concentration. A maximum power factor of 7.9 μW/cm °C2 for the Cu0.039(Dy2S3)0.961 alloy was observed at 690 °C. The 300–1000 °C integrated average power factor shows that the optimum Cu-doping level in the Dy2S3 matrix is 5–7 at. %. The thermal conductivity of Cu0.039(Dy2S3)0.961 decreased with increasing temperature from 300 to 1000 °C and was governed by both electronic and lattice contributions up to 600 °C, but above 600 °C the electronic contribution is predominant. The 300–1000 °C integrated average thermal conductivity of Cu0.039(Dy2S3)0.961 is 18.38 mW/cm °C, which gives this material a maximum figure of merit Z of 0.440×10−3/°C at 800 °C. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5474-5480 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Controlled amounts of GaP and P were added to a Si0.8Ge0.2 matrix by a powder-metallurgical technique in order to evaluate the optimum composition for thermoelectric applications. Bulk determination of the gallium and phosphorus content in fully dense, hot pressed compacts was performed by inductively coupled plasma atomic emission spectroscopy. The transport properties of the compacts were characterized by Hall effect measurements at room temperature and by measurements of electrical resistivity, Seebeck coefficient, and thermal diffusivity to 1000 °C. Considerable variation in the electrical transport properties were found to accompany changes in the Ga/P ratio, in the total amount of dopant, and changes in other preparation conditions. Alloys with gallium phosphide additions exhibit carrier concentrations higher than those obtained in alloys doped only with phosphorus. Alloys with a nominal phosphorus content greater than 2.0 at. % were found to be overdoped and those containing less than 0.6 at. % phosphorus were found to be underdoped relative to the material's maximum figure of merit. Room temperature electron mobilities greater than 40 cm2/V s were commonly obtained in samples with a carrier concentration of 3×1020 cm−3 or greater. A 300–1000 °C integrated average figure of merit (Z=S2/ρΛ) of 0.93×10−3 °C−1 was achieved within an optimum composition range of 0.8–1.2 at. % P and 0.6–0.8 mol % GaP, which is 20% higher than current n-type Si-Ge alloys doped with 0.59 at. % P as used in the Voyager, Galileo, and Ulysses missions. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5858-5861 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A series of n-type ZnO alloys doped with Ga and ZnS were prepared by mechanical alloying. Densities of 95% to 98% of theoretical density were achieved by hot pressing the milled powders at 1000 and 1200 °C, respectively. The electrical resistivity and Seebeck coefficient of alloys containing 0.25–3.0 at. % Ga were characterized between 22 and 1000 °C. The magnitude of the resistivity and Seebeck coefficient at 22 °C ranged from 0.2 mΩ cm and −25 μV/°C for the most heavily doped specimen to 1.1 mΩ cm and −70 μV/°C for the lightly doped material. The alloys exhibit a positive temperature coefficient of resistivity and Seebeck coefficient with a nearly constant slope over the temperature range studied. Thermal diffusivity measurements on a specimen containing 1.0 at. % Ga were performed over the same temperature range. The thermal conductivity appears to follow a T−1 dependence, decreasing from 180 mW/cm °C at 22 °C to 82 mW/cm °C at 1000 °C. An estimate of the maximum dimensionless thermoelectric figure of merit, ZT, in this system at 1000 °C gives a value of 0.26, a factor of three to four less than current state-of-the-art materials such as Si–Ge. A significant reduction in thermal conductivity would be required to make these alloys competitive with existing thermoelectric power generation materials. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 776-780 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Samples of Tb0.3Dy0.7Fe2−x where x=0.05–0.10 (TERFENOL-D) were characterized for electrical resistivity and thermal diffusivity between room temperature and the Curie temperature, which for this composition is 360 °C. Additionally, the thermal diffusivity of one of the samples was measured to 1000 °C. Measurements were performed on two different orientations of standard, production-grade, grain-oriented TERFENOL-D produced by a Bridgman growth technique at ETREMA Products, Inc. The orientations were parallel and normal to the 〈112〉 crystallographic direction. The electrical resistivity and thermal diffusivity both exhibited isotropic behavior over the temperature range studied. The electrical resistivity of all samples increased monotonically from 0.06 mΩ-cm at room temperature to 0.14 mΩ cm at 360 °C, consistent with behavior expected for normal metals. The thermal conductivity was found to decrease with temperature from 135 mW/cm °C at room temperature to 122 mW/cm °C at 360 °C. The thermal diffusivity was found to exhibit a sharp cusp in the vicinity of the Curie temperature, TC, increasing with temperature for T〉TC. Application of the Wiedemann–Franz law indicates that over 86% of the heat is carried by electrons. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 363-367 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We describe the development and characterization of an ultrafast x-ray framing camera capable of recording images with a temporal resolution of 50 ps and spatial resolution of 22 μm at the image plane. The unique design incorporates an x-ray photocathode directly into a suspended-strip transmission line. The photocathode is gated using a high-voltage (−5-kV) pulse of short duration generated with a photoconductive switch. The photoelectrons are extracted through an unbiased microchannel plate and are directly detected with a charge-coupled device in the electron-bombardment mode. We discuss applications of the camera to investigate the dynamics of laser-produced plasmas.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Psychophysiology 7 (1970), S. 0 
    ISSN: 1469-8986
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin , Psychologie
    Notizen: Ten hospital corpsmen working the 11 p.m. to 7 a.m. shift were selected for a study of night workers. Each completed a questionnaire describing his experiences with night work, and each slept in the laboratory for several days, while continuous EEG recordings were made. Although the quantity and distribution of the EEG sleep stages was not greatly different from that found in night sleep periods, there were some irregularities in the progression of EEG patterns, particularly interruptions in Stage REM sleep. It appeared that Ss slept better, worked better, and felt better after several weeks of assignment to night shift work.
    Materialart: Digitale Medien
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