ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Preamorphization of a silicon substrate by Ge+ ion implantation is required for shallow doping of boron, which, in turn, is the key process to realize highly integrated semiconductor devices. However, Ge+ ions have not been stably extracted by conventional methods. Several chemical compounds of germanium, GeO, GeS, GeCl4, and GeF4, were supplied to a microwave ion source and the characteristics of their ion extractions were compared. The conditions for obtaining mass-separated Ge+ ions of more than 1 mA were found.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1142905
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