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Surface polygonization on GaAs wafers (1988)

Gray, M. L. ; Abemathy, C. R. ; Caruso, R. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 1468-1471

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Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Polygonized surface structure produced by furnace annealing GaAs wafers was studied by optical and scanning electron microscopy. The surface structure was revealed by chemically etching wafers which had been implanted with silicon and subjected to a furnace annealing cycle. Cathodoluminescence micrographs demonstrate an absence of impurity segregation to the polygon boundaries. No correlation was found between growth-induced dislocations and the polygonal networks. It is proposed that the surface structure results from a vacancy-condensation process. Related surface effects were observed for rapidly annealed wafers. A correlation between the furnace annealed and rapidly annealed GaAs is presented.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341819

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