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  • 1
    Electronic Resource
    Electronic Resource
    Capability of plasma-enhanced chemical-vapor-deposited SiO2 films as diffusion barriers on InGaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 880-886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on the diffusion behavior of InGaAs host atoms as well as Zn and Cd atoms in plasma-enhanced chemical-vapor-deposited SiO2 layers are reported. The group-III elements In and Ga diffuse very fast in SiO2 at annealing temperatures from 400 to 600 °C. A mobilization of these species by OH groups is proposed. An As diffusion can only be observed in the case of semiconductor samples etched in a H2SO4 solution before SiO2 deposition. An As-rich interface layer produced by this etchant is assumed to act as exhausting source for mobile As-O complexes. The InGaAs host atoms could be detected up to a concentration level of about 1018 cm−3 by secondary-ion-mass spectroscopy in the SiO2 films after annealing. Their effective diffusion coefficients were estimated to be in the order of 10−15–10−13 cm2/s in the investigated temperature range. Activation energies of about 0.6 eV (In), 0.3 eV (Ga), and 0.8 eV (As) could be determined. The In/Ga out-diffusion was accompanied by the occurrence of two new peaks in the photoluminescence spectra of the InGaAs layers. Binding energies of about 11 and 18 meV were obtained, respectively. Possible crystal defects as well as results of numerical simulations on base of simple diffusion models are discussed. The capability of plasma-enhanced chemical-vapor-deposited SiO2 layers as a diffusion mask during Zn as well as Cd acceptor diffusion at 500 and 600 °C was proved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357764
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  • 2
    Electronic Resource
    Electronic Resource
    Plasma enhanced chemical vapor deposited SiO2 layers for passivation of InGaAs:Fe metal-semiconductor-metal photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 945-947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on the passivation and antireflection coating of InGaAs:Fe metal-semiconductor-metal photodetectors using remote plasma-enhanced chemical vapor deposited SiO2 layers are reported. The deposition of SiO2 on the detector surface leads to a reduction of the dark current by nearly two orders of magnitude at 5 V bias. Temperature-dependent measurements of the leakage current characteristics indicate that the Schottky barrier height is substantially lowered near the metallization edges of the reversed biased contact fingers. The effective barrier height in the edge region, which controls the magnitude of the leakage current is determined by activation energy plots to be 0.14 eV for nonpassivated and 0.20 eV for passivated structures, respectively. Apart from the improvement of the dark current characteristics, the SiO2 coating results in a drastic reduction of the photocurrent gain. The long-term stability of the passivation is proved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359025
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  • 3
    Electronic Resource
    Electronic Resource
    Acceptor diffusion across InGaAs/InP heterointerfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on Zn and Cd diffusion across InGaAs/InP and InP/InGaAs heterointerfaces are reported. Drastic changes in the group III sublattice were obtained near the interface when Zn diffused from an InGaAs top layer across the heterojunction. Diffusion from an InP top layer, as well as Cd diffusion, or simple annealing of the samples had no measurable influence on the stability of the interfaces. The strong interdiffusion of In and Ga host atoms as well as the Zn gettering at the interface is discussed in terms of two diffusion mechanisms, namely, the "kick-out'' mechanism and the vacancy mechanism. The activation energy for the Zn-stimulated Ga interdiffusion across the InGaAs/InP heterojunction was estimated to be EA =3.8±0.3 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102629
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    Paper (German National Licenses)
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