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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 993-1003 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the performance of GaAs/AlGaAs quantum-well infrared detectors exhibiting intersubband absorption in the 8–14 μm band. The dark current characteristics have been investigated as a function of barrier width and electron density in the well and compared with a model which takes into account thermionic emission and thermally assisted tunneling in the Wentzel–Kramers–Brillouin approximation. The model gives a good description of the data and is extended to predict the variation of detectivity and background limited operating temperature with structural parameters.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 1426-1434 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Previous work using the Born–Green–Yvon (BGY) integral equation approach has been extended to investigate the case of a pure compressible lattice fluid, yielding the equation of state as our main result. We show that the BGY equation does a very good to excellent job at fitting the experimental pressure–volume–temperature surface for both small molecules and polymers; the fit parameters are then used to make predictions about thermodynamic properties for the system of interest. We note that two other equations of state can easily be obtained from the BGY equation, and compare results using BGY and other equations of state. We also comment on the agreement between the BGY description in the athermal limit, which is equivalent to Guggenheim's treatment of random mixing, and some lattice Monte Carlo results.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The 2′,3′-cyclic nucleotide 3′-phosphodiesterases (CNPs) are closely related oligodendrocyte proteins whose in vivo function is unknown. To identify subcellular sites of CNP function, the distribution of CNP and CNP mRNA was determined in tissue sections from rats of various developmental ages. Our results indicate that CNP gene products were expressed exclusively by oligodendrocytes in the CNS. CNP mRNA was concentrated around oligodendrocyte perinuclear regions during all stages of myelination. Developmentally, initial detection of CNP mRNA closely paralleled initial detection of its translation products. In electron micrographs of immunostained ultrathin cryosections, CNP was associated with oligodendrocyte membranes during the earliest phase of axonal ensheathment. In more mature fibers, immunocytochemistry established that the CNPs are not major components of compact myelin but are concentrated within specific regions of the oligodendrocyte and myelin internode. These include (a) the plasma membrane of oligodendrocytes and their processes, (b) the periaxonal membrane and inner mesaxon, (c) the outer tongue process, (d) the paranodal myelin loops, and (e) the‘“incisure-like” membranes found in many larger CNS myelin sheaths. A cytoplasmic pool of CNP was also detected in oligodendrocyte perikarya and larger oligodendrocyte processes. CNP was also enriched in similar locations in myelinated fibers of the PNS.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2382-2385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time domain spectroscopy has been used to measure the room temperature transmission of highly doped GaAs in the frequency range from 0.2 to above 3 THz. We studied n- and p-type layers, with carrier densities between 1016 and 2×1018 cm−3, which had been grown on undoped GaAs substrates. Transmission spectra could be fitted within experimental error by using a Drude model for the conductivity. Fitted carrier densities for both carrier types and mobilities for p-type GaAs were in good agreement with the results of Hall measurements. In the case of n-GaAs, the optically determined mobility appeared to underestimate slightly the Hall mobility. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2069-2071 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and detection efficiencies of photoconducting THz transmitters and receivers are found to be sensitive to the polarization of the optical gating pulse. Signal amplitudes from GaAs coplanar stripline transmitters and silicon-on-sapphire dipole receivers vary by factors of up to 4 and 3, respectively, with rotation of the exciting pulse polarization. In both cases, maximum signal is obtained when the polarization of the normally incident light is perpendicular to the edge of the metal electrodes. This polarization sensitivity, which appears to arise from differences in the spatial distribution of photoexcited carriers in the semiconductor, needs to be considered when optimizing the signal-to-noise ratio in coherent THz spectroscopy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2647-2649 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the excitation and control of coherent cyclotron emission from a semiconductor using a THz beam containing pairs of sub-picosecond electric field pulses closely spaced in time. The source of THz radiation in these experiments is a biased coplanar stripline fabricated on semi-insulating GaAs and edge illuminated with pairs of temporally and spatially separated 70 fs pulses of near infrared light. A GaAs/AlGaAs two-dimensional electron gas was used in the experiments because of its long intraband phase relaxation time. Changes in the amplitude and phase of the cyclotron emission are observed when varying the interpulse delay and are well described within the theoretical framework of a two level system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3472-3480 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence measurements made on free-standing, lattice-matched GaAs/AlGaAs and pseudomorphic InGaAs/GaAs quantum boxes fabricated by laterally patterning quantum wells using electron-beam lithography and either reactive ion etching or ion beam milling. At temperatures below 10–20 K the luminescence efficiency of most of the GaAs quantum-box arrays tends to scale with the volume of quantum-well material remaining after processing even for the smallest boxes which have lateral dimensions of only 40–50 nm. These observations indicate that the surface recombination rate in GaAs submicron structures can be small relative to the radiative recombination rate at low temperatures. In contrast, radiative recombination in the InGaAs/GaAs quantum boxes is strongly quenched for lateral dimensions less than 500 nm. We suggest that this is because photoexcited carriers are laterally localized in the GaAs boxes by potentials of the order of a few meV, possibly associated with interface disorder or strain relaxation, and that such localization effects are smaller in the InGaAs boxes.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Water and environment journal 15 (2001), S. 0 
    ISSN: 1747-6593
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: The formation of nitrite in distribution systems has been understood for a number of years. This paper explains how controls have been developed based upon that knowledge, and how nitrite formation was reduced by 80% over a period of three years, in London's distribution system. Effective control measures and associated procedures included (a) forming process-optimisation teams, (b) setting realistic targets, and (c) producing a manageable and simple monitoring system - by training and communication, and using simple analytical equipment. Control measures included optimisation of the ammoniation process and increasing the chlorine concentration in the distribution system.
    Type of Medium: Electronic Resource
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