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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of free-standing quantum boxes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3472-3480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence measurements made on free-standing, lattice-matched GaAs/AlGaAs and pseudomorphic InGaAs/GaAs quantum boxes fabricated by laterally patterning quantum wells using electron-beam lithography and either reactive ion etching or ion beam milling. At temperatures below 10–20 K the luminescence efficiency of most of the GaAs quantum-box arrays tends to scale with the volume of quantum-well material remaining after processing even for the smallest boxes which have lateral dimensions of only 40–50 nm. These observations indicate that the surface recombination rate in GaAs submicron structures can be small relative to the radiative recombination rate at low temperatures. In contrast, radiative recombination in the InGaAs/GaAs quantum boxes is strongly quenched for lateral dimensions less than 500 nm. We suggest that this is because photoexcited carriers are laterally localized in the GaAs boxes by potentials of the order of a few meV, possibly associated with interface disorder or strain relaxation, and that such localization effects are smaller in the InGaAs boxes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345337
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Selective etching of InP and InGaAsP over AlInAs using CH4/H2 reactive ion etching (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3189-3191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective etching of InP and InGaAsP over AlInAs was obtained using CH4/H2 reactive ion etching without the addition of a fluorine containing gas. By tuning the methane-to-hydrogen ratio, pressure, and power, sputter desorption of the reacted AlInAs etch products can be inhibited, thus enabling AlInAs to be used as an etch stop layer. The use of a fluorine free mixture enables dielectrics such as silicon dioxide or nitride to be used as the masking material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109125
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of GaAs-AlGaAs quantum dots
    Amsterdam : Elsevier
    Microelectronic Engineering 9 (1989), S. 365-368 
    Details
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(89)90080-4
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    Paper (German National Licenses)
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