ZIB

Treffer pro Seite

Treffer 1 - 3 | 3 Treffer

Sortierung

Digitale Medien

Selective etching of InP and InGaAsP over AlInAs using CH4/H2 reactive ion etching (1993)

Arnot, H. E. G. ; Glew, R. W. ; Schiavini, G. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 3189-3191

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Selective etching of InP and InGaAsP over AlInAs was obtained using CH4/H2 reactive ion etching without the addition of a fluorine containing gas. By tuning the methane-to-hydrogen ratio, pressure, and power, sputter desorption of the reacted AlInAs etch products can be inhibited, thus enabling AlInAs to be used as an etch stop layer. The use of a fluorine free mixture enables dielectrics such as silicon dioxide or nitride to be used as the masking material.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.109125

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Digitale Medien

Photoluminescence studies of free-standing quantum boxes (1990)

Andrews, S. R. ; Arnot, H. ; Rees, P. K. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 3472-3480

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report photoluminescence measurements made on free-standing, lattice-matched GaAs/AlGaAs and pseudomorphic InGaAs/GaAs quantum boxes fabricated by laterally patterning quantum wells using electron-beam lithography and either reactive ion etching or ion beam milling. At temperatures below 10–20 K the luminescence efficiency of most of the GaAs quantum-box arrays tends to scale with the volume of quantum-well material remaining after processing even for the smallest boxes which have lateral dimensions of only 40–50 nm. These observations indicate that the surface recombination rate in GaAs submicron structures can be small relative to the radiative recombination rate at low temperatures. In contrast, radiative recombination in the InGaAs/GaAs quantum boxes is strongly quenched for lateral dimensions less than 500 nm. We suggest that this is because photoexcited carriers are laterally localized in the GaAs boxes by potentials of the order of a few meV, possibly associated with interface disorder or strain relaxation, and that such localization effects are smaller in the InGaAs boxes.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.345337

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Digitale Medien

Photoluminescence studies of GaAs-AlGaAs quantum dots

Arnot, H. ; Andrews, S. ; Beaumont, S.

Amsterdam : Elsevier

Microelectronic Engineering 9 (1989), S. 365-368

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 0167-9317

Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Thema: Elektrotechnik, Elektronik, Nachrichtentechnik

Materialart: Digitale Medien

URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(89)90080-4

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 3 | 3 Treffer