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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6676-6685 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a general theoretical treatment of ionized impurity scattering in semiconductor superlattices. Employing an extension of the quasi-two-dimensional calculations of Stern and Howard to multi-well structures, we explicitly account for nonuniformity of the wavefunction distribution function, arbitrary dispersion relations, scattering by impurities in neighboring periods, and screening by electrons in neighboring wells. Interperiod phenomena are found to be quite significant whenever the screening length is comparable to or longer than the distance between the quantum wells. Calculated results are compared with recent data for modulation-doped and setback-modulation-doped HgTe-CdTe superlattices. However, the discussion emphasizes general aspects of the problem rather than features specific to a particular system.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2523-2525 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that interface roughness is the dominant low-temperature scattering mechanism for electrons in HgTe-CdTe superlattices with thin wells. Not only do the experimental mobilities follow the expected d6W dependence, but the observed temperature dependence is accurately reproduced by theory when the treatment of interface roughness scattering is generalized for narrow-gap superlattices. The fits to data yield roughness correlation lengths in the range 60–200 A(ring).
    Type of Medium: Electronic Resource
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