Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 791-799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd diffusion into GaAs single crystals has been investigated in the temperature range 756–1201 °C. Penetration profiles measured by secondary ion mass spectroscopy and spreading-resistance profiling agree with each other and are numerically reproduced on the basis of the kick-out diffusion mechanism. A major involvement of vacancies via the dissociative mechanism can be excluded. This enables us to deduce from the Cd profiles effective Cd diffusivities (Dseff) as well as Ga diffusivities (DISD) mediated by doubly positively charged Ga self-interstitials (IGa2+). The Dseff values obtained from As-rich and As-poor ambients are mutually consistent. The same holds true for the DISD data. Reduced to 1 atm of As vapor pressure and electrically intrinsic conditions the Cd diffusion coefficient results as 1.76×104 exp(−4.80 eV/kB T) cm2 s−1 and the IGa2+-related self-diffusion coefficient as 3.5×104 exp(−5.74 eV/kB T) cm2 s−1. The present data provide strong evidence that in heavily p-doped GaAs atomic transport related to the Ga sublattice is governed by self-interstitials rather than vacancies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370806
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Implantation and diffusion of 73As in GaAs and GaP (2000)
    Springer
    Hyperfine interactions 129 (2000), S. 337-347 
    Details
    ISSN: 1572-9540
    Keywords: diffusion ; 73As ; GaAs ; GaP ; computer simulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Self-diffusion on the As sublattice in intrinsic GaAs and foreign-atom diffusion on the P sublattice in intrinsic GaP were investigated in a direct way by As tracer diffusion measurements using the radioisotope 73As. For this purpose 73As was implanted in both materials at the ISOLDE facility of CERN. Then diffusion annealings were performed followed by serial sectioning and counting of the radioactivity in each section. The resulting profiles were simulated within a computer model which accounts for the observed loss of tracer to the diffusion ambient. The so-obtained diffusion coefficients for As in GaAs and GaP are compared with existing diffusivities in these compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1012641212173
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...