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  • 1
    Electronic Resource
    Electronic Resource
    Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals (1991)
    Springer
    Applied physics 53 (1991), S. 65-74 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 Wp ; 61.70 Yq ; 64.75.+g ; 66.30 Jt ; 66.30 Lw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323437
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  • 2
    Electronic Resource
    Electronic Resource
    Energy levels of Zn in Si1−XGeX alloys (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2331-2333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy measurements were performed on Zn-doped Si1−XGeX with X between 0 and 0.34. Our investigations reveal two deep hole traps which are attributed to the acceptor states Zn0/− and Zn−/2− of substitutional Zn. Taking into account band-offset data for Si1−XGeX, we have found that the energy level related to Zn0/− is horizontally aligned across the composition-dependent band gap which gives evidence for a highly localized defect state. The defect level related to the second hole trap decreases with increasing Ge content. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121813
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  • 3
    Electronic Resource
    Electronic Resource
    Out-diffusion of Zn from Si: A method to study vacancy properties in Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8062-8064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report out-diffusion experiments of Zn from homogeneously Zn-doped Si samples which were performed at 1107 °C. Depth distributions of Zn recorded by spreading-resistance profiling are accurately described on the basis of simultaneous contributions of the kick-out and dissociative diffusion mechanism. Analysis of the profiles reveals that Zn out-diffusion is mainly mediated by the dissociative mechanism. Fitting of Zn profiles yields data for the transport capacity of vacancies CVeqDV in Si and their thermal equilibrium concentration CVeq. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367900
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  • 4
    Electronic Resource
    Electronic Resource
    Evidence of point defect supersaturation during Zn diffusion in InP single crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2843-2845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of defects during Zn diffusion into undoped and semi-insulating Fe-doped InP single crystals at 700 °C was observed by transmission electron microscopy for various diffusion conditions. Agglomerates of predominantly perfect interstitial-type dislocation loops, dislocations, and small indium precipitates inside voids are observed in the Zn-diffused crystal region. In addition, large planar arrays of precipitates are formed by climbing dislocations. From these observations it is concluded that the incorporation of Zn on In sublattice sites creates a supersaturation of In self-interstitials which is relieved by dislocation loop formation leading to a supersaturation of P vacancies and void formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358698
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4409-4422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experiment of diffusing Zn into GaAs has been conducted at 900 °C using Zn metal as the source material in a quartz ampoule, with or without As being included. For cases without further including As in the ampoule, the Zn profile is box shaped and the Zn-diffused region contains dislocations and void/Ga-precipitate pairs, with the void to precipitate volume ratio being essentially constant throughout the Zn-diffused region. For cases including As in the ampoule, the Zn profile is of the kink-and-tail type with the Zn-diffused region containing dislocations and void/Ga-precipitate pairs. In the profile tail region, the Ga-precipitate to void volume ratio is substantial, while in the profile kink region of high Zn concentration near the surface only voids are left. The results are interpreted in accordance with Zn and diffusion-ambient-induced Ga-As-Zn ternary alloy system thermal equilibrium requirements in general, and the consequential solid phase composition variations in particular. Without As inclusion in the ampoule, the overall Ga-As material Ga concentration in the Zn-diffused region has exceeded the allowed limit of the GaAs crystal, with the crystal composition at a limit. With the inclusion of As in the ampoule, the GaAs crystal composition in the high Zn concentration region near the surface has reached an allowed As concentration limit, but in the profile tail region the overall Ga-As material Ga concentration has exceeded an allowed limit of the GaAs crystal. This is because the vapor phase Zn and As species constitute two conflicting thermodynamic driving forces for producing GaAs crystals with two opposite and extreme compositions: As for producing As-rich crystals, and Zn for producing Ga-rich materials. The common assumption that the inclusion of As in the diffusion ampoule will ensure the whole GaAs crystal essentially at an As-rich composition does not hold during high-concentration Zn indiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354412
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion, solubility, and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading-resistance analysis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1345-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion profiles of gold in germanium were measured using the radiotracer as well as the spreading-resistance technique. Diffusion coefficients from both experimental methods show a good agreement and are described by an activation energy of 147±2 kJ mol−1 and a preexponential factor in the range (1–2)×10−6 m2 s−1. The results are interpreted within a generalized dissociative model allowing for interstitial-substitutional exchange with the aid of vacancies or interstitial Au-vacancy pairs. Solubility data taken from the boundary concentration of the penetration profiles reveal nonsignificant differences between the total Au concentration and that of substitutional Au atoms. Basic thermodynamic quantities were calculated from the temperature dependence of the solid solubility using data from the Au-Ge phase diagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349591
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 791-799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd diffusion into GaAs single crystals has been investigated in the temperature range 756–1201 °C. Penetration profiles measured by secondary ion mass spectroscopy and spreading-resistance profiling agree with each other and are numerically reproduced on the basis of the kick-out diffusion mechanism. A major involvement of vacancies via the dissociative mechanism can be excluded. This enables us to deduce from the Cd profiles effective Cd diffusivities (Dseff) as well as Ga diffusivities (DISD) mediated by doubly positively charged Ga self-interstitials (IGa2+). The Dseff values obtained from As-rich and As-poor ambients are mutually consistent. The same holds true for the DISD data. Reduced to 1 atm of As vapor pressure and electrically intrinsic conditions the Cd diffusion coefficient results as 1.76×104 exp(−4.80 eV/kB T) cm2 s−1 and the IGa2+-related self-diffusion coefficient as 3.5×104 exp(−5.74 eV/kB T) cm2 s−1. The present data provide strong evidence that in heavily p-doped GaAs atomic transport related to the Ga sublattice is governed by self-interstitials rather than vacancies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370806
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion and solubility of copper in germanium (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5211-5219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion profiles and the solubility of Cu in Ge were measured in the temperature interval 850–1200 K by means of the spreading-resistance technique. From these data it is concluded that the diffusion of Cu in Ge involves the interchange between a highly mobile interstitial configuration, Cui, and a practically immobile substitutional configuration, Cus, with the aid of vacancies, V, via the so-called dissociative mechanism, Cui+V(arrow-right-and-left)Cus. The excellent agreement of the values of the vacancy contribution to the tracer self-diffusion coefficient in Ge, as calculated from our diffusivity and solubility data on Cu in Ge, with directly measured values of the 71Ge tracer self-diffusion coefficient from the literature demonstrates that self-diffusion in Ge occurs via vacancies. A comparison with the mechanisms of Au and self-diffusion in Si is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335259
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  • 9
    Electronic Resource
    Electronic Resource
    Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3188-3190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report diffusion experiments of implanted boron (B) in nitrogen-doped 4H- and aluminum-doped 6H-SiC which were performed at temperatures between 1700 and 1800 °C. Transient enhanced B diffusion caused by implantation damage was effectively suppressed by annealing of the B-implanted samples at 900 °C prior to the diffusion anneal. Concentration profiles of B measured with secondary ion mass spectrometry are accurately described on the basis of the kick-out mechanism. This provides strong evidence that Si self-interstitials mainly mediate B diffusion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325390
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  • 10
    Electronic Resource
    Electronic Resource
    Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 642-644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of Cu and Ni into Ge was investigated between 700 and 900 °C with the aid of rapid isothermal lamp annealing and spreading-resistance profiling. Using low-dislocation-density single-crystal Ge wafers with a backside gold layer, we observed typical double-hump diffusion profiles of both Cu and Ni. These profiles can be described within the dissociative model by taking into account that the front surface acts as source for both vacancies (V) and Cu or Ni while the back surface combines the V-source feature with a Cu, Ni-sink property. Profile fitting yields data regarding the V-assisted Ge self-diffusion coefficient and the equilibrium concentration of vacancies as a function of temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127071
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