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  • 1
    Electronic Resource
    Electronic Resource
    Ion induced magnetization reorientation in Co/Pt multilayers for patterned media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5768-5770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt multilayer films with perpendicular magnetic anisotropy and large out-of-plane coercivities of 3.9–8.5 kOe have been found to undergo a spin reorientation transition from out-of-plane to in-plane upon irradiation with 700 keV nitrogen ions. X-ray reflectivity experiments show that the multilayer structure gets progressively disrupted with increasing ion dose, providing direct evidence for local atomic displacements at the Co/Pt interfaces. This effectively destroys the magnetic interface anisotropy, which was varied by about a factor of 2, between KS≅0.4 erg/cm2 and KS≅0.85 erg/cm2 for two particular films. The dose required to initiate spin-reorientation, 6×1014 N+/cm2 and 1.5×1015 N+/cm2, respectively, scales with KS. It is roughly equal to the number of Co interface atoms per unit interface area contributing to KS. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372516
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  • 2
    Electronic Resource
    Electronic Resource
    Surface hardness enhancement in ion-implanted amorphous carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1480-1484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of producing carbon nitride has been studied by ion implantation into amorphous carbon. Thin films were formed with 100 keV N+ or 80 keV C+ ions at various target temperatures and ion doses. The apparent surface hardness measured by nanoindentation with load-displacement data shows an optimum value of 22.3±0.4 GPa with the ion dose of 2×1017 N+/cm2 implanted at −100 °C, while the hardness of the unimplanted amorphous carbon is 6.0±0.2 GPa. Self-implantation by carbon also produces similar hardness enhancement with a narrow temperature window. The maximum enhanced surface hardness is well correlated with the asymmetric diffuse peak at around 1500 cm−1 in Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363017
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced Cu-Teflon adhesion by presputtering prior to the Cu deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 103-105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion of Cu to Teflon has been studied by depositing Cu to Teflon with and without a presputtering prior to the Cu deposition. Without presputtering, a weak adhesion is observed, with a value of 1 g/mm, which fails the scotch tape test. With a presputtering using 500 eV Ar+ ions, the adhesion rapidly increases, becoming evident after a sputtering of 10 s, and reaches maximal increases of 50 times at longer sputtering times. All the Cu films deposited after presputtering show strong adhesion, and can only be removed by forceful scratching with sharp tools. The presputtering was shown to change both the surface morphology of Teflon, with the deposited Cu following the morphologies created, and the interface chemical bonding between Cu and Teflon as revealed by x-ray photoelectron spectroscopy. Exposure of the presputtered Teflon to air prior to the Cu deposition shows no effect on the strong adhesion obtained. An interface bonding model is suggested for the enhanced adhesion observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98637
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of MeV ion irradiation of thin cubic boron nitride films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2980-2987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adherent boron nitride thin films with a high cubic phase content (up to about 90%) were synthesized over large areas by means of ion assisted evaporation. Besides the well known superior properties of cubic boron nitride (c-BN) nearly nothing is known about the behavior of c-BN under MeV ion irradiation where the ions penetrate through the thin film and come to rest far away in the substrate. Therefore, exploratory MeV ion implantation experiments into as-deposited c-BN rich films were conducted at room temperature. Ions with different masses were chosen to study the effect of the nuclear and electronic stopping processes on the highly cubic BN films. Furthermore the influence of various ion doses (3.5×1013–2.0×1017 ions/cm2) on the cubic structure was investigated. To get an insight into the effects of the different post-deposition treatments, the as-deposited and ion implanted films were analyzed by Fourier transformed infrared spectroscopy, Rutherford backscattering, x-ray diffraction, and Auger electron spectroscopy. Depending on the ion dose, the heavy Xe ion implantation results in four different regimes for the resulting material. The implantation induced the total number of displacements per unit volume as an essential measure of the effect of the postdeposition treatment. Depending on the total number of displacements per unit volume the cubic BN structure can be transformed into a hexagonal BN dominated network. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367053
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  • 5
    Electronic Resource
    Electronic Resource
    Patterning magnetic films by ion beam irradiation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7004-7006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used ion beam irradiation through a silicon stencil mask to alter the magnetic properties of Co/Pt multilayer and FePt chemically-ordered superlattice films. In both systems, ion irradiation disorders the as-grown films which results in a reduction of the magnetic anisotropy. Regularly spaced micrometer-sized regions of magnetically altered material have been produced over areas of a square millimeter. These magnetic structures have been observed by magnetic force microscopy. By stepping the mask during irradiation, features at twice the spatial frequency of the mask holes have been produced. Such patterned magnetic films are of interest for application in high-density magnetic recording. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372912
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  • 6
    Electronic Resource
    Electronic Resource
    Very low temperature (〈400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2566-2568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Concurrent low energy (50–70 eV) ion irradiation during silicon molecular beam epitaxy results in an increased epitaxial thickness at very low temperatures relative to conventional molecular beam epitaxy. Ion irradiation of a (1×1) dihydride-terminated Si(001) results in a (2×1) reconstruction, indicating irradiation-induced hydrogen desorption. Conventional molecular beam epitaxial growth is possible on a dihydride-terminated Si(001) surface following (2×1) reconstruction such that the substrate temperature never exceeds 150 °C; which is not possible without irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109298
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-beam patterning of magnetic films using stencil masks (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 403-405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously, ion-beam irradiation has been shown to locally alter the magnetic properties of thin Co/Pt multilayer films. In this work, we have used ion-beam irradiation through a silicon stencil mask having 1-μm-diam holes to pattern a magnetic film. Regularly spaced micrometer-sized regions of magnetically altered material have been produced over areas of a square millimeter in Co/Pt multilayers. These magnetic structures have been observed by magnetic force microscopy. The patterning technique is demonstrated with mask–sample spacing as large as 0.5 mm. In addition, smaller regions of magnetic contrast, down to 100 nm, were created by using two masks with partially overlapping micrometer holes. Such patterned magnetic films are of interest for application in high-density magnetic recording. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124389
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic patterning of chemically-ordered CrPt3 films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1151-1153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report magnetic patterning of ferrimagnetic CrPt3 films by locally suppressing the magnetic order using ion-beam irradiation. Chemically-ordered CrPt3 films grown on MgO(110) single-crystal and amorphous SiNx substrates are ferrimagnetic and exhibit strain-induced uniaxial magnetic anisotropy. X-ray diffraction confirms the formation of the L12 phase and magneto-optical Kerr effect spectroscopy reveals the theoretically expected dependence of Kerr rotation and ellipticity on photon energy. Irradiation of the films with 700 keV N+ ions at doses (approximately-greater-than)6×1016 ions/cm2 transforms the chemically-ordered CrPt3 ferrimagnetic alloy into the chemically-disordered nonmagnetic fcc phase. As a result, ordered CrPt3 layers can be patterned into magnetic and nonmagnetic regions and are candidate material for ion-beam-patterned magnetic recording media. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394722
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of the magnetic modification of Co/Pt multilayer films by He+, Ar+, and Ga+ ion irradiation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 279-281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt multilayers can exhibit large perpendicular anisotropies and coercivities that are very sensitive to the quality of the Co/Pt interfaces. We have characterized the dependence of coercivity of Co/Pt multilayers on irradiation with various ion species (He+, Ar+, and Ga+), energies (20 keV–2 MeV), and doses (1011–1017 ions/cm2), in order to understand better the nature of the structural changes responsible for the magnetic changes. We find that, in general, the system is much more sensitive to irradiation than expected on the basis of a nearest-neighbor coupling model and simple ballistic ion-beam mixing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432108
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  • 10
    Electronic Resource
    Electronic Resource
    Correlation between chemistry and the amount of mixing in bilayers submitted to ion bombardment (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1426-1429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments conducted with bilayers of elements so chosen as to maximize chemical differences and to minimize physical differences (e.g., atomic weights) demonstrate the importance of chemistry in determining the amount of interaction which results from ion mixing experiments. These results emphasize the dominance of chemical factors which are at least neglected, if not totally ignored, in the modeling of ion mixing effects. Ion bombardment of Pd/Hf bilayers causes the formation of Pd3Hf; the existence of such compounds was not detected in other bilayers of "similar'' elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334505
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