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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 2049-2053 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2126-2128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of annealing polycrystalline YBa2Cu3O7−δ samples in a He ambient and in vacuum, on the composition of their internal surfaces. X-ray photoelectron spectroscopy (XPS) data indicate a decrease in the amount of BaCO3 but a higher proportion of Ba at the near-surface region upon low-temperature annealing in He or vacuum. The latter effect seems to derive from the presence of a surface barrier for oxygen outdiffusion, and can be prevented by diffusing Ag into the polycrystalline sample. Changes in the cutoff energies of the ultraviolet photoelectron spectra indicate that a submonolayer coverage of Ag is sufficient to produce a change in the work function of 0.3 eV, corresponding to the lowering of the surface barrier.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 251-254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between metals and fluorocarbon polymer films has been studied for Cu, Cr, Ti, Al, and Au on polytetrafluoroethylene (PTFE) and tetrafluoroethylene-hexafluoropropylene copolymer (FEP) films. Polymer films were applied on the Cr/SiO2 /Si substrate by spinning the aqueous dispersions of the polymer resin particles, followed by thermal curing. Strips of different metals were deposited on the polymers, and adhesion was measured at 90° peel test. The peel strengths were invariably higher for the metals on FEP than those of the corresponding metals on PTFE. Among the metals, Ti showed the highest peel strength for both polymers, followed by Cr and Al, with Cu and Au being the lowest. The peel strengths of Ti, Cr, and Cu on FEP are 85, 45, and 12 g/mm, respectively, and the corresponding ones on PTFE are 23, 5, and 2 g/mm, respectively. X-ray photoelectron spectroscopic analysis shows that the metal-polymer bonding involves the metal-carbon interactions. The strongest interaction is observed for Ti with the polymers, forming Ti carbidelike bonds. Cr also shows strong interaction with the two polymers, but to a lesser degree compared with Ti. Only a weak bonding is shown for Cu. The difference in peel strengths among the metals shows a correlation with the difference in electronegativities between the metals and carbon. Little contribution to the observed peel strengths is seen from the surface morphological analysis of the untreated polymers.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1786-1788 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that chemical etching of strontium titanate (SrTiO3) results in titanium-terminated (B site) surfaces. In this letter, we describe a facile method for generating strontium-terminated surfaces in SrTiO3. We demonstrate that a substrate treatment consisting of a low-power oxygen ashing followed by annealing yields a strontium (A site)-terminated surface in single-crystal SrTiO3 (100). This surface termination of the substrate allows the deposition of cuprate films with improved quality. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3632-3634 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we introduce an architecture for a room-temperature oxide channel field-effect transistor where the oxide channel material is buried below the gate oxide layer. This architecture has several significant advantages over the surface channel architecture [D. M. Newns, J. A. Misewich, C. C. Tseui, A. Gupta, B. A. Scott, and A. Schrott, Appl. Phys. Lett. 73, 780 (1998).] in coupling capacitance, channel mobility, and channel stability. Although the transconductance in the devices has been improved to 45 μS (at Vd=1 V and Vg=2 V for a channel length of 1 μm and width=150 μm), capacitance measurements show that the surface charge density is still below the optimal theoretical value. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 103-105 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion of Cu to Teflon has been studied by depositing Cu to Teflon with and without a presputtering prior to the Cu deposition. Without presputtering, a weak adhesion is observed, with a value of 1 g/mm, which fails the scotch tape test. With a presputtering using 500 eV Ar+ ions, the adhesion rapidly increases, becoming evident after a sputtering of 10 s, and reaches maximal increases of 50 times at longer sputtering times. All the Cu films deposited after presputtering show strong adhesion, and can only be removed by forceful scratching with sharp tools. The presputtering was shown to change both the surface morphology of Teflon, with the deposited Cu following the morphologies created, and the interface chemical bonding between Cu and Teflon as revealed by x-ray photoelectron spectroscopy. Exposure of the presputtered Teflon to air prior to the Cu deposition shows no effect on the strong adhesion obtained. An interface bonding model is suggested for the enhanced adhesion observed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1582-1584 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excimer laser pulses with wavelengths of 248 and 308 nm were used to selectively seed Pd on SiO2 surfaces, making them suitable for electroless plating. This novel seeding process for insulating materials is accomplished with the sample immersed in the seeding solution, and occurs only on the areas of the substrate that are illuminated (through the liquid) by the laser light. The Pd content of the seeded samples increased with the number of pulses, but was rather independent of repetition rate. The deposition rate showed a dependence with wavelength consistent with a defect driven mechanism for electron excitation through the band gap of SiO2. These electrons then reduce the Pd ions in the solution in contact with the surface.
    Type of Medium: Electronic Resource
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