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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of Fe1−xSix alloys (x≤0.1) studied by spectroscopic ellipsometry (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4043-4046 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of dilute Fe1−xSix (x≤0.1) alloys were studied by spectroscopic ellipsometry in the 1.5–6 eV photon energy region. The absorption strength of the alloys is found to decrease in the entire energy region as the Si composition increases. The interband-transition edges of Fe at about 2.5 eV in the minority-spin bands and at about 5 eV in the majority-spin bands shift to lower energies as the Si composition increases. The decrease in the absorption strength is interpreted as due to a decrease in the density of states of the Fe host and also due to a reduction of conduction-electron concentration in the alloys. The shifts of the 2.5 and 5 eV interband-transition edges can be explained in terms of a perturbative variation in the band structure of Fe induced by its alloying with Si. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365756
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  • 2
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry study of SrBi2Ta2O9 ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of SrBi2Ta2O9 (SBT) ferroelectric thin films were investigated by spectroscopic ellipsometry at room temperature in the 1.5–5.5 eV spectral range. The films were grown on platinized silicon (Pt/Ti/SiO2/Si) with a Bi/Sr ratio (x) range from 1.2 to 2.8 by pulsed-laser deposition. The measured pseudodielectric functions of the samples indicate the band-gap energy of SBT shifts to lower energies as x increases. The optical constants and band-gap energies of the SBT films were determined through multilayer analyses on their pseudodielectric functions. The band-gap energy of SBT is found to shift to lower energies quite linearly with x. The band-gap energy at stoichiometric composition (x=2) is estimated to be 4.1 eV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402654
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  • 3
    Electronic Resource
    Electronic Resource
    Optical constants and electronic interband transitions of disordered GaAs1−xPx alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3696-3699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report dielectric function spectra of disordered GaAs1−xPx alloys measured using spectroscopic ellipsometry at room temperature in the 1.5–5.5 eV photon energy region. Energies of the interband-transition edges, E0, E1, E0′, and E2, of the alloys were determined by line-shape analyses on their dielectric functions. It is found that the E1, E0′, and E2 energies of the alloys increase linearly with the increase of the P composition between those of GaAs and GaP while the increase of their E0 energy shows finite positive bowing. The energy separation between the E1 and its spin-orbit-split E1+Δ1 edges of the alloys decreases linearly with the increase of the P composition with their lifetime broadenings becoming larger than those of the binary compounds by more than 20%. The effect of compositional disorder on the electronic structure of GaAs1−xPx alloy system was discussed based on the present optical data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368546
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