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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the growth of indium phosphide by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5486-5492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of unintentionally doped indium phosphide by low pressure metalorganic chemical vapor deposition (LPMOCVD) using triethlylindium and phosphine has been investigated by low temperature photoluminescence (PL). Pregrowth annealing was found to result in improved crystalline quality of the seed surface. The predominant acceptor impurity on the annealed substrate surface and in the initial epitaxial region (1200 A(ring)) was shown to be carbon. The major acceptor impurity in thicker epilayers further away from the substrate interface was determined to be Zn. Silicon was also identified from the PL spectra, though its concentration might be much smaller than that of zinc. No deep level impurities were observed in this material. Most important of all, the highly resolved exciton PL spectrum demonstrated that excellent quality InP comparable to the best material grown by vapor phase epitaxy could be grown by LPMOCVD without the need for phosphine cracking.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335460
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of the nonlinearity in the luminescence of GaAs under high-density picosecond photoexcitation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 958-962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report extensive experimental measurements of the nonlinearity in the band-band recombination luminescence in GaAs both broadband and as a function of wavelength, doping, and photoexcitation density. The results of a simple rate equation model which includes the bimolecular term show good qualitative agreement with the data. The implications of the nonlinearity for pump-probe-type time-resolved measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336173
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gas in In0.53Ga0.47As/InP heterojunctions grown by atmospheric pressure metalorganic chemical-vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3145-3149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality modulation doped In0.53Ga0.47As/InP heterostructures have been grown by atmospheric pressure metalorganic chemical-vapor deposition (MOCVD) using solid trimethylindium source. The two-dimensional nature of electrons bound in the In0.53Ga0.47As/InP heterojunctions is proved by a Shubnikov-de Haas effect experiment. Electron Hall mobilities as high as 12000, 83000, 98000, and 92000 cm2/V s at 300, 77, 40, and 4.2 K are obtained, respectively. The electron effective mass is measured to be m@B|CR =0.043 m0 by cyclotron resonance experiments on the samples with two-dimensional electron sheet concentrations of (3.0–3.7)×1011/cm2. From far-infrared impurity absorption data the ionization energy of the residual donors in the MOCVD-grown In0.53Ga0.47As is determined to be 2.95 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335818
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  • 4
    Electronic Resource
    Electronic Resource
    Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facets (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 493-495 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to comparable lasers with one etched and one cleaved facet. L-shaped lasers, which make use of total internal reflection, have also been fabricated. The threshold current density of L-shaped lasers is similar to that of rectangular lasers with comparable cavity length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100960
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Long-lived InGaAs quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1861-1862 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101260
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  • 6
    Electronic Resource
    Electronic Resource
    Spatial beam switching and bistability in a diode ring laser (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report bistable switching of the output direction in certain triangular diode ring lasers. These lasers operate unidirectionally at large drive currents, with up to 98% of the output power emerging from either the clockwise or the counterclockwise direction. The preferred direction can switch back and forth, with a large hysteresis loop, as the drive current is varied. Up to 20 mW of optical power changes direction at each switch. We propose an explanation based on the theory of two-mode competition via gain saturation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125949
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  • 7
    Electronic Resource
    Electronic Resource
    GaInP/GaP partially ordered layer type-I strained quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4236-4238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type-I regions of ordered GaInP and type-II regions of disordered GaInP. Observation of photoluminescence at room temperature suggests that this QW may be useful as an active layer for laser structures grown on GaP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116956
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  • 8
    Electronic Resource
    Electronic Resource
    Etched-facet AlGaAs triangular-shaped ring lasers with output coupling (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1395-1397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Total and partial reflection are demonstrated at the bends of V-shaped lasers. By varying the angle of incidence to the facet at the bend, the reflectivity at this facet can be changed. Two totally and one partially reflecting V-shaped lasers are combined in a unibodied structure to realize a triangular-shaped ring laser (trilaser). Trilasers are made of three sections which meet at three facets. Two of the facets provide total internal reflection while the third allows partial transmission from which light output is obtained. The Q of the resultant planar cavity is modified by geometry, without the need for facet coating. V-shaped lasers and trilasers are formed by using the chemically assisted ion beam etching technique in an AlGaAs/GaAs-based single quantum well graded-index separate confinement heterostructure material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105317
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  • 9
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs-based triangular-shaped ring ridge lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1658-1660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Triangular-shaped ring ridge lasers (ridge trilasers) have been fabricated using quantum-well semiconductor laser material. The spectra of these ridge trilasers show single-wavelength operation above threshold confirming traveling-wave behavior in these lasers. Unidirectional operation is reported based on asymmetry between the clockwise and counterclockwise directions, in contrast to conventional unidirectional operation in ring lasers based on magnetic techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107228
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