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  • 1
    Electronic Resource
    Electronic Resource
    Growth of InGaAsP/InP single-quantum-well and multiple-quantum well structures by low-pressure metal-organic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7267-7272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP/InP single-quantum well and multiquantum-well (MQW) structures have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum wells grown consist of 1.3- and 1.5-μm composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 to 1300 A(ring) for the various structures grown. Analysis of these structures by low-temperature photoluminescence reveals distinct, sharp luminescent peaks, with half-widths from 4.8 to 13 meV. Cross-sectional transmission electron microscopy (XTEM) and Auger spectroscopy of the quantum-well structures reveals extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP-MOCVD for the growth of very thin epitaxial layers. This preliminary data indicates that the growth of MQW structures for the next generation of laser diodes (i.e., MQW-distributed-feedback lasers), with monolayer interfacial abruptness, is possible by LP-MOCVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347624
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  • 2
    Electronic Resource
    Electronic Resource
    Three-configurational surface magneto-optical Kerr effect measurement system for an ultrahigh vacuum in situ study of ultrathin magnetic films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 3801-3805 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a three-configurational surface magneto-optical Kerr effect system, which provides the simultaneous measurements of the "polar," "longitudinal," and "transverse" Kerr hysteresis loops at the position where deposition is carried out in an ultrahigh vacuum growth chamber. The present system enables in situ three-dimensional vectorial studies of ultrathin film magnetism with a submonolayer sensitivity. We present three-configurational hysteresis loops measured during the growth of Co films on Pd(111), glass, and Pd/glass substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310346
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  • 3
    Electronic Resource
    Electronic Resource
    Protective role of nitric oxide-mediated inflammatory response against lipid peroxidation in ultraviolet B-irradiated skin (2000)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 142 (2000), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Ultraviolet (UV) irradiation is known to induce serious oxidative damage in the skin via lipid peroxidation. Nitric oxide (NO) synthesized by keratinocytes, melanocytes and endothelial cells in response to proinflammatory cytokines and UV radiation, has been reported to prevent UV-induced apoptosis in the skin. We have examined the effects of NO on UVB-induced lipid peroxidation in murine skin in vivo. UVB induced a dose-dependent increase in lipid peroxidation of skin extracts in vitro; however, lipid peroxidation in the skin in vivo remained unaffected at irradiation doses of less than 1·0 J cm−2 and decreased significantly at doses over 1·5 J cm−2 (P 〈 0·01). Time-delayed inhibition of lipid peroxidation in the skin in vivo was observed after irradiation at 1·5 J cm−2. Administration of N G-nitro- l-arginine methyl ester ( L-NAME), an inhibitor of NO synthesis, enhanced lipid peroxidation (P 〈 0·05), while it suppressed the ear-swelling response (ESR), a biological marker of inflammation. By contrast, administration of sodium nitroprusside, an NO enhancer, suppressed lipid peroxidation (P 〈 0·01), while it enhanced the ESR. Expression of inducible nitric oxide synthase (iNOS) was observed from 12 to 48 h postirradiation at doses of 0·4–1·6 J cm−2. The UVB-induced iNOS expression was markedly inhibited by L-NAME, suggesting that iNOS is a major enzyme in the production of NO. These results suggest that NO acts as a mediator of the inflammatory response in UVB-irradiated skin, and that lipid peroxidation is inversely regulated with the NO-mediated inflammatory response in vivo.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2000.03409.x
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  • 4
    Electronic Resource
    Electronic Resource
    Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3705-3709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for GaN, AlN, InN, and InGaN were measured using the same reactor and plasma parameters in Cl2/Ar or CH4/H2/Ar plasmas. The etch rates of all four materials were found to be significantly faster for ECR relative to RIE conditions in both chemistries, indicating that a high ion density is an important factor in the etch. The ion density under ECR conditions is ∼3×1011 cm−3 as measured by microwave interferometry, compared to ∼2×109 cm−3 for RIE conditions, and optical emission intensities are at least an order of magnitude higher in the ECR discharges. It appears that the nitride etch rates are largely determined by the initial bond breaking that must precede etch product formation, since the etch products are as volatile as those of conventional III–V materials such as GaAs, but the etch rates are typically a factor of about 5 lower for the nitrides. Cl2/Ar plasmas were found to etch GaN, InN, and InGaN faster than CH4/H2/Ar under ECR conditions, while AlN was etched slightly faster in CH4/H2/Ar plasmas. The surface morphology of InN was found to be the most sensitive to changes in plasma parameters and was a strong function of both rf power and etch chemistry for ECR etching. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363320
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  • 5
    Electronic Resource
    Electronic Resource
    Si, Be, and C ion implantation in GaAs0.93P0.07 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2296-2299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation efficiencies of implanted Si, Be, and C in GaAs0.93P0.07 have been measured in the annealing range 650–950 °C. Be provides much higher sheet hole densities than C, even when the latter is coimplanted with Ar to enhance the electrical activity. The maximum activation efficiency of Be is ∼60% at a dose of 5×1014 cm2 whereas that of C is an order of magnitude lower. Si produces donor activation percentages up to ∼20% under optimized annealing conditions. Capless proximity annealing is adequate for surface preservation up to ∼950 °C, as measured by scanning electron microscopy and atomic force microscopy. Photoluminescence measurements provide evidence that nonradiative, damage-related point defects remain in the GaAsP even after annealing of 950 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363059
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  • 6
    Electronic Resource
    Electronic Resource
    The hydridation and nitridation of GeSi oxide annealed in ammonia (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360123
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  • 7
    Electronic Resource
    Electronic Resource
    GaInP/GaP partially ordered layer type-I strained quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4236-4238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type-I regions of ordered GaInP and type-II regions of disordered GaInP. Observation of photoluminescence at room temperature suggests that this QW may be useful as an active layer for laser structures grown on GaP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116956
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  • 8
    Electronic Resource
    Electronic Resource
    ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1426-1428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance plasma etch rates for GaN, InN, InAlN, AlN, and InGaN were measured for a new plasma chemistry, ICl/Ar. The effects of gas chemistry, microwave and rf power on the etch rates for these materials were examined. InN proved to be the most sensitive to the plasma composition and ion density. The GaN, InN, and InGaN etch rates reached ∼13 000, 11 500, and ∼7000 A(ring)/min, respectively, at 250 W rf (−275 V dc) and 1000 W microwave power. The etched surface of GaN was found to be smooth, with no significant preferential loss of N from the surface at low rf powers, and no significant residue on the surface after etching. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117603
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  • 9
    Electronic Resource
    Electronic Resource
    Etching of InP at (approximately-greater-than)1 μm/min in Cl2/Ar plasma chemistries (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple Cl2/Ar plasma chemistry without additional sample heating is found to produce etch rates above 1 μm/min for InP under high microwave power (1000 W) electron cyclotron resonance conditions. While the etch rate increases essentially linearly with Cl2 composition the root-mean-square (RMS) surface roughness measured by atomic force microscopy is strongly dependent on the Cl2-to-Ar ratio. Under optimized conditions (10Cl2/5Ar), RMS roughness of ∼2.6 nm is obtained on samples etched more than 1 μm, a typical unetched control sample displays a RMS value of 1.3–1.6 nm. The high ion current under ECR conditions appears to promote efficient sputter desorption of the InCl3 etch product and prevents buildup of the usual selvedge layer that requires elevated sample temperatures to desorb under more conventional reactive ion etching conditions. The result is a simplified plasma chemistry with avoidance of the polymer deposition and hydrogen passivation associated with CH4/H2 discharges. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116553
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  • 10
    Electronic Resource
    Electronic Resource
    Minority-carrier-enhanced reactivation of hydrogen-passivated Mg in GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2690-2692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of minority-carrier injection on the reactivation of hydrogen passivated Mg in GaN at 175 °C has been investigated in p-n junction diodes. The dissociation of the neutral MgH complexes is greatly enhanced in the presence of minority carrier and the reactivation process follows second-order kinetics. Conventional annealing under zero-bias conditions does not produce Mg-H dissociation until temperatures ≥450 °C. These results provide an explanation for the e-beam-induced reactivation of Mg acceptors in hydrogenated GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116310
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