ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Cubic-silicon carbide crystals have been grown from solution by using the traveling-zonemethod. In this technique a molten silicon zone heated by induction coils is held between two rodsof polycrystalline silicon carbide. Due to the growth set-up and boundary conditions, different masstransfer mechanisms are operative : diffusion, buoyancy, Marangoni convection and forcedconvection. The growth experiments have been performed on various seed crystals. Cubic SiCcrystals were grown with a [111] habit on the [0001] silicon faces of 4H SiC seeds. The polytype3C-SiC was identified by Transmission Electron Microscopy. Micro Raman spectroscopy andphotoluminescence analyses showed good crystalline quality with few 6H inclusions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.123.pdf
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