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  • 1
    Electronic Resource
    Electronic Resource
    Effects of ion beam and electron cyclotron resonance etch-induced damage on the optical properties of multiple quantum well structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2818-2822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study we have utilized photoluminescence spectroscopy (PL) on GaAs/AlGaAs multiple quantum well (MQW) structures to assess and compare the relative damage induced by the standard ion beam etch technique and the "less damaging'' newer electron cyclotron resonance (ECR) etch technique. The PL intensity is shown to correlate well with the ion dose and energy. At an equivalent total surface erosion under Ar ion irradiation, the ECR process is shown to cause significantly less deterioration on QW PL yield. Furthermore, after a short anneal the ECR-irradiated structures' PL showed total recovery, whereas PL of structures exposed to an Ar+ ion beam exhibited only partial improvement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357019
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced modification of carbon nitride thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7351-7353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of experiments on local pulsed ultraviolet laser annealing of carbon nitride (CNx) thin films are reported. It is shown that laser radiation can be used for efficient graphitization of CNx thin films. The degree of local transformation of diamond-like sp3 bonded CNx compound films into graphite-like ones is dependent upon the radiation energy density. It is also shown that the electron field emission properties of the thin films can be modified by the laser treatment. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324686
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  • 3
    Electronic Resource
    Electronic Resource
    Study of Hc enhancement in Co-modified γ-Fe2O3 films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3883-3885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties and depth profiles of Co-modified γ-Fe2O3 films have been studied. The Hc of these films varies between 0.3 and 2.5 kOe nonmonotonically with Co concentration and depends only slightly on temperature. The non-diffusion-like Co-rich layer that appears underneath the surface of the Fe-oxide films displaying an enhanced Hc has been positively demonstrated to be responsible for the Hc enhancement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338597
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  • 4
    Electronic Resource
    Electronic Resource
    Etching of tungsten with XeF2: An x-ray photoelectron spectroscopy study (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4587-4590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ x-ray photoelectron spectroscopy measurements of both W(100) crystals and sputter-deposited tungsten films exposed to a molecular beam of XeF2 with and without an accompanying argon ion beam have yielded the fluorine coverage and the chemical states of the adsorbed fluorine as a function of temperature, exposure, and ion dose. WF, WF2, WF3, and WF4 were found to exist on the tungsten surfaces. Room and elevated temperature exposures of clean tungsten resulted in the surface population of mainly WF species with WF4 observed on nonannealed samples. Ion dose promoted the formation of higher fluorine coordination species from the WF leading to the formation of volatile WF6 and thus resulting in ion-enhanced etching of tungsten.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339054
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of InSb (111) on sapphire (0001) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1916-1917 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, transmission electron microscopy, and scanning electron microscopy data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 〈111〉 direction. Mobility data show room-temperature mobilities as high as 1×104 cm2 /V s from some regions on the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101240
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  • 6
    Electronic Resource
    Electronic Resource
    Nucleation and growth of chemical beam epitaxy gallium nitride thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3072-3074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride films have been grown on (0001) sapphire substrates by chemical beam epitaxy (CBE) using triethyl gallium (TEG) and ammonia (NH3) precursors. Prior to the CBE epi-GaN layer growth, electron cyclotron resonance plasma-assisted metal-organic molecular beam epitaxy was utilized to deposit a nucleation layer at lower temperatures. The crystallinity of CBE-grown GaN films was found to be strongly growth–temperature dependent. The degree of crystallinity was correlated with the surface carbon composition as measured in situ by mass spectroscopy of recoiled ions. The optimum growth–temperature range for CBE GaN growth was found to be between 800 and 825 °C. Within this narrow window, thin films with streaky two-dimensional reflection high-energy electron diffraction patterns and good photoluminescence properties were obtained. The surface rms roughness, as measured by atomic force microscopy, was as low as 40 Å/1 μm2 for the highest quality thin films; lattice-resolved images supported the deposition of crystalline GaN revealing hexagonal structures with the spacing anticipated for GaN. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120250
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  • 7
    Electronic Resource
    Electronic Resource
    Field emission properties of GaN films on Si(111) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1808-1810 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN thin films were grown by electron cyclotron resonance molecular beam epitaxy on Si(111) wafers. X-ray diffraction and transmission electron microscopy revealed that the thin films were single crystals with a hexagonal symmetry and a clear textured structure. The average column size was determined to be close to 100 nm in diameter. Despite the large defect density, a strong room temperature photoluminescence signal with a full width at half maximum of 138 meV was observed from these samples. The surface exhibited random array of sharp tips at the microscopic level with about 5×109 tips/cm2 density. The field emission characteristics of the as-grown thin films were measured, and a threshold electric field as low as 30–40 V/μm and an emission current density of more than 100 mA/cm2 were obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122289
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 622-624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron nitride (BN) thin films (containing mixed cBN/hBN phase) have been deposited on Si(100) substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5×1016 to 1×1017 cm−3. The Mg-doped BN films showed carrier concentrations in the range of 1.2×1018 cm−3 to 5.2×1018 cm−3 when the Mg cell temperature was varied from 250 to 500 °C. The films were analyzed for both majority elements (B and N) and dopant/impurity (Si, Mg, Fe, etc.) incorporation using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions (MRSI). MRSI is shown to be superior for dopant characterization of boron nitride thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116488
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 696-698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of thin carbon nitride films on Si(100) substrates at temperatures in the range of 100–700 °C using electron-beam evaporation of graphite assisted with electron cyclotron resonance (ECR) plasma generated nitrogen species. The effect of the substrate temperature, and the nitrogen flow on the composition ratio C/N, and the C—N bonding were investigated using Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and Raman spectroscopy. The FTIR spectra show that the films produced exhibit a very high visible to infrared transmittance (0.85–0.95). These spectra were dominated by amine group (NH2) with the presence of C-N stretching modes. From both RBS and XPS, the nitrogen concentration in the film was calculated and was found in the range of 24%–48%, depending on the nitrogen partial pressure in the ECR source. Raman spectrum of the high nitrogen content thin film shows a well resolved peak at 1275 cm−1 suggesting the formation of a fourfold coordinated (sp3) CN film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112272
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of cubic boron nitride on Si(100) by neutralized nitrogen ion bombardment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1514-1516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly cubic phase and stoichiometric boron nitride films were deposited on Si(100) substrates using a neutralized nitrogen beam and electron beam evaporation of boron. High intensity, focused, and low-energy neutralized nitrogen beam was supplied using a newly developed neutralizer atomic beam ion source (NABS) adapted to a Kaufman-type ion source. The films were grown at substrate temperatures in the range 400–500 °C and a boron evaporation rate of 0.2 A/s. Infrared transmittance spectra of the films showed that a highly cubic phase (80%) was obtained in the area of the focused beam. These films were compared to those obtained using similar conditions but with the NABS disconnected from the ion source, and it was found that the cubic phase content decreases drastically (10%). The results show that the NABS was the determining factor in enhancing the formation of the cubic boron nitride films. Furthermore, the addition of Ar to N, which is reported to increase the momentum transfer and promote the formation of the cubic phase, did not play a significant role when the NABS was used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111876
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