Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2443-2448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxide growth of rf sputtered polycrystalline Si1−xGex films was found not sensitive to the Ge concentration in the films. The infrared results showed that the oxide grown on Si0.61Ge0.39 film mainly contained GeO2 and the oxide contained Ge–O–Ge and Si–O–Ge bonds when grown on Si0.73Ge0.27 film. X-ray photoelectron spectroscopy results showed the absence of Ge in the bulk of the oxides for Si1−xGex films with x〈0.27 and no pile-up of Ge at the SiO2/Si1−xGex interface. The electrical breakdown fields of oxides grown on Si1−xGex films were lower than the oxide breakdown field of polysilicon. The Dit and Qf values of the SiO2/Si1−xGex system were found to be rather high at ∼2.1–2.6×1012 eV−1 cm−2 and ∼1.1–2.7×1012 cm−2, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431435
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 192-197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371843
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Microstructural characterization of rf sputtered polycrystalline silicon germanium films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 444-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon germanium (Si1−xGex) films deposited by the rf sputtering technique were characterized using a combination of transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman spectroscopy techniques. The TEM results showed small grains (10–20 nm) with microtwins, and AFM showed islands of 100–200 nm in the films. The XRD results show that our films consist of Si1−xGex alloy with no cluster of Ge or a Ge-rich material embedded in a Si matrix. The smaller grains in our films could be a result of an abundance of nucleating sites or impurities in the films. Raman spectroscopy results indicate that our films were strain free. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423388
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1−x−yGexCy films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5819-5824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1−x−yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413715
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Microwave plasma nitridation of silicon dioxide on strained Si (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1559-1561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of ultrathin (〈100 Å) nitrided SiO2 on strained Si using microwave O2/N2O/NH3 plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO2 interface. The electrical properties of the nitrided oxides have been characterized using a metal–insulator–semiconductor structure. N2O plasma treatment of O2/NH3 nitrided SiO2 results in a lower insulator charge density (1.2×1011 cm−2) and a higher breakdown voltage. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122204
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Oxidation of strained Si in a microwave electron cyclotron resonance plasma (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 217-219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance plasma oxidation of strained Si on relaxed Si1−xGex buffer layers in O2 ambient at room temperature is reported. The electrical properties of grown oxide have been characterized and compared with thermally grown oxides using a metal-oxide semiconductor structure. At a low field, the accumulation of holes in the buried Si1−xGex layer, due to the type-II band offset, has been observed. The experimental results from thermally grown oxides have been compared with the simulation results obtained using a heterostructure Poisson solver. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118370
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of oxides grown on strained Si using microwave N2O plasma (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 66-68 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave plasma oxidation (below 200 °C) of strained Si on relaxed Si1−xGex buffer layers in N2O ambient is reported. The electrical properties of grown oxide have been characterized using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 6×1010 cm−2 and 1.2×1011 cm−2 eV−1, respectively. The oxide on strained-Si samples has exhibited hole trapping behavior and moderately low interface state generation on constant current stressing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119308
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Pt/p-strained-Si Schottky diode characteristics at low temperature (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 942-944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height and ideality factor of Pt on p-type strained Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) have been investigated in the temperature range (90–150 K) using the current-voltage characteristics and are found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the barrier height increases. Simulation based on a drift-diffusion emission model has been used to explain the experimental results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119696
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of electrical properties of N2O/O2/N2O-grown oxides on strained SiGe (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2547-2549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of electrical properties of split-N2O grown oxides on strained SiGe layers by rapid thermal oxidation is reported. The reliability and thermal stability of ultrathin oxides have been examined by high frequency capacitance–voltage and current density versus electric field measurements. It is observed that at a low (〈6 MV/cm) electric field, the shallow trap-assisted conduction mechanism is responsible for the leakage current below 100 °C and the Frenkel–Poole conduction dominates above 100 °C. At a high (〉11 MV/cm) electric field, however, the leakage current is mainly governed by the Fowler–Nordheim tunneling. Charge-to-breakdown measurements at a constant current stressing show a higher reliability for the split-N2O grown oxides. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1469221
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of rapid thermal oxides on Si1−x−yGexCy films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 256-258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of rapid thermal oxides on Si1−x−yGexCy layers are reported. X-ray photoelectron spectroscopy results indicate segregation of Ge at the SiO2/Si1−x−yGexCy interface, a thin GeO2 layer at the oxide surface, and elemental Ge at the interface and in the oxide. The interface state density of the samples ranges from 3.0×1011 to 3.6×1012 eV−1 cm−2. All the samples show electron trapping behavior and the trap generation rate decreases with increasing C concentration. The charge-to-breakdown value and the oxide breakdown field are higher for Si0.887Ge0.113 than for Si1−x−yGexCy samples, and these values decrease with increasing C concentration. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126942
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...