Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Reactions of Sulphoxides with Phosphorus Compounds and Reactive Organic Halides (1962)
    [s.l.] : Nature Publishing Group
    Nature 196 (1962), S. 372-372 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Our work with phosphorus compounds and organic halides is summarized in equations (1-6). Ph3P + Me2SO-〉Ph3PO + Me2S (1) Ph2PCl + 2Me2SO-〉Ph2PO2H + Me2S + MeSCH2Cl (2) PhPCl2 + 3Me2SO-^PhPO(OH)2 + Me2S + 2MeSCH2Cl (3) N3P3C16 + 6Me2SO-^N3P3O6H6,MeSCH2Cl -f 5MeSCH2Cl (4) N3C3C13 + 3Me2SO -〉 ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/196372a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Inhibition of the Formation of 3,4-Benzpyrene during Hydrocarbon Combustion (1961)
    [s.l.] : Nature Publishing Group
    Nature 192 (1961), S. 353-354 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The subject of formation of carbon in flames has attracted attention in recent years; the mechanism is still obscure but polycyclic hydrocarbons are often associated with the carbonaceous material formed. The present work was undertaken to determine whether the formation of 3,4-benzpyrene can be ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/192353a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Microwave plasma nitridation of silicon dioxide on strained Si (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1559-1561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of ultrathin (〈100 Å) nitrided SiO2 on strained Si using microwave O2/N2O/NH3 plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO2 interface. The electrical properties of the nitrided oxides have been characterized using a metal–insulator–semiconductor structure. N2O plasma treatment of O2/NH3 nitrided SiO2 results in a lower insulator charge density (1.2×1011 cm−2) and a higher breakdown voltage. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122204
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Effect of reactive-ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion-beam sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8145-8152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nitride and oxynitride films of very low hydrogen content have been deposited on silicon at low temperatures (150–200 °C) using ion-beam sputtering. A dual-ion-beam sputtering technique, making simultaneous use of an energetic argon-ion beam to sputter silicon nitride from a target and a low-energy oxygen or nitrogen ion beam to react with the sputtered films on the substrate, has been employed to control the composition of the films. A precise control of film composition independent of deposition rate has been achieved through the control of oxygen/nitrogen ion-beam parameters and gas flow ratios. The films have been characterized by the measurement and study of refractive index, chemical etch rate, infrared absorption, and x-ray photoelectron spectra. A direct correlation between film properties with oxygen content has been obtained for silicon oxynitride films. The electrical properties have been studied by the measurement of the characteristics of metal-insulator-semiconductor capacitors fabricated using the deposited films. In situ ion-beam oxidation of silicon prior to the oxynitride deposition has resulted in a film with a low insulator charge number density (3.5×1011 cm−2) and interface trap density (4×1011 cm−2 eV−1), which is suitable for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357027
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ion assisted growth and characterization of polycrystalline silicon and silicon-germanium films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4472-4476 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polysilicon films have been deposited at a low temperature by single and dual ion beam sputtering. The structural and electrical properties of as-deposited and annealed films have been characterized by x-ray diffraction, secondary ion mass spectroscopy, atomic force microscopy, and Hall mobility measurements. The films are microcrystalline with average grain size ranging from 200 to 400 Å. The films exposed to a low-energy secondary ion beam during sputtering from a silicon target have exhibited smoother surface topography and different electrical behavior than the films deposited without any secondary ion bombardment. Some preliminary studies on ion beam sputtered SiGe films using a compound target are also presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367209
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electron beam deposited lead-lanthanum-zirconate-titanate thin films for silicon based device applications (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple single-source electron-beam evaporation technique has been used for the deposition of lead-lanthanum-zirconate-titanate (PLZT) thin films for silicon-based device applications. An optimized annealing condition has been established for the formation of crystalline perovskite phases. The effect of the bottom electrodes and the barrier layer on the growth of the films has been studied. Films with good dielectric and optical properties have been obtained under opt- imized conditions. Electrical properties of the films have been evaluated using metal–insulator–semiconductor and metal–insulator–metal structures. A moderately low interface trap density and very low leakage current density demonstrate the potential of the deposited films for device applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360887
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Properties of SiGe oxides grown in a microwave oxygen plasma (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6135-6140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360556
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2039-2042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall mobilities in a temperature range of 80–300 K have been measured in fully strained Si1−xGex and partially strain-compensated p-type Si1−x−yGexCy alloy layers grown on Si (100) by ultrahigh vacuum chemical vapor deposition. The effect of the addition of C on strain compensation of Si1−xGex films has been studied by high-resolution x-ray diffraction analysis. The Hall hole mobility is found to increase with decreasing compensative strain or effective Ge content in the layer throughout the studied temperature range. The effect of a Si-cap layer on the hole mobility of Si1−x−yGexCy film has been investigated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305927
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4103-4107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a comparative study of the electrical properties of some oxides e.g., Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3 as gate dielectric for strained Si0.74Ge0.26 metal–oxide–semiconductor devices. Secondary ion mass spectroscopy spectra of the Ga2O3(Gd2O3)/SiGe sample showed a significant amount of GaO and GdO along with Ga and Gd signals. The depth profile taken for O, Si, SiO, Ga, Ge, Gd, and GdO showed sharp interface at about 20 nm. Though Gd2O3 and Y2O3 showed the highest resistivity and breakdown strength, Ga2O3(Gd2O3) was found to be most effective for surface passivation of SiGe giving lowest interface state density while pure Ga2O3 was incapable of passivating the SiGe surface. The positive fixed oxide charge and interface state density for Ga2O3(Gd2O3) film were found to be 8.4×1010 cm−2 and 4.8×1011 eV−1 cm−2, respectively, which are the lowest among all the oxide films of the present study. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405134
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Fluorine-enhanced nitridation of silicon at low temperatures in a microwave plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1874-1876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microwave plasma discharge at very low temperatures (200–250 °C) has been used for the growth of thin silicon oxynitride films suitable for gate dielectric applications. The addition of CHF3 as a source of fluorine enhances the growth rate. A x-ray photoelectron spectroscopy study indicates the incorporation of fluorine (F/Si(approximately-equal-to)0.2) in the film. Electrical properties of the grown layers have been evaluated by the characterization of metal-insulator-semiconductor capacitors. Results have indicated the presence of negative charges in the insulator. The estimated charge density is lowest for the fluorinated film. The conduction mechanism in the films at room temperature appears to be Frenkel–Poole type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349512
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...