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  • 1
    Electronic Resource
    Electronic Resource
    High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1214-1215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n-GaN-Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor deposited heterostructure is dominated by two-dimensional electron gas at the heterostructure interface. HEMT devices were fabricated on ion-implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 μm gate length (10 μm channel opening, i.e., source-drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a −6 V gate bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109775
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Schottky barrier photodetector based on Mg-doped p-type GaN films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2455-2456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the fabrication and characterization of Schottky barrier photodetectors on p-type GaN films. These films were grown over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition and magnesium as the p-type dopant. The current-voltage and capacitance-voltage characteristics were measured for Ti/Au Schottky barriers for a film with a p doping of 7×1017 cm−3. We measured a 1.5 V forward turn on and a 3 V reverse breakdown. The zero bias responsivity of a detector with 1 mm2 area was measured to be 0.13 A/W. For these photovoltaic detectors, the photoresponse was nearly constant from 200 to 365 nm and fell sharply by several orders of magnitude for wavelengths above 365 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110473
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Metal semiconductor field effect transistor based on single crystal GaN (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1786-1787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109549
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    Paper (German National Licenses)
    Fulltext
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