Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1403-1405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and operation characteristics of linear array charge-coupled devices on AlGaN/GaN heterostructures are reported. In transistor mode, a three-stage device behaved as a multiple-gated field effect transistor with a transconductance of 12.8 mS/mm. In shift register mode, charge packages can be injected at one side and detected at the other side with a delay corresponding to the number of transfer electrodes of the device. At a transfer frequency of 6 MHz, the devices exhibited an estimated charge transfer efficiency of 0.94. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121957
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2917-2919 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of photoconductive ultraviolet detectors based on insulating single-crystal GaN. The active layer (GaN) was deposited over basal-plane sapphire substrates using a unique switched atomic-layer-epitaxy process. The sensors were measured to have a responsivity of 2000 A/W at a wavelength of 365 nm under a 5-V bias. The responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped by three orders of magnitude within 10 nm of the band edge (by 375 nm). We estimate our sensors to have a gain of 6×103 (for wavelength 365 nm) and a bandwidth in excess of 2 kHz. The photosignal exhibited a linear behavior over five orders of incident optical power, thereby implying a very large dynamic range for these GaN-based ultraviolet sensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106819
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Schottky barrier photodetector based on Mg-doped p-type GaN films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2455-2456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the fabrication and characterization of Schottky barrier photodetectors on p-type GaN films. These films were grown over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition and magnesium as the p-type dopant. The current-voltage and capacitance-voltage characteristics were measured for Ti/Au Schottky barriers for a film with a p doping of 7×1017 cm−3. We measured a 1.5 V forward turn on and a 3 V reverse breakdown. The zero bias responsivity of a detector with 1 mm2 area was measured to be 0.13 A/W. For these photovoltaic detectors, the photoresponse was nearly constant from 200 to 365 nm and fell sharply by several orders of magnitude for wavelengths above 365 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110473
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116384
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...