ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed an anomalous behavior of reverse-bias leakage current in Hg1−xCdxTe n+-on-p photodiodes at 77 K as a function of total 10 MeV electron dose. For ZnS/SiO2 passivated planar configurations of photodiodes with 0.25〈x〈0.5, the leakage current increases superlinearly with increasing total dose greater than 10 krad, saturates at doses between 100 and 200 krad, followed by a dramatic recovery that is sometimes complete to near-preradiation values. For x(approximately-equal-to)0.2, very little or no recovery is observed. The effects of 60CO gamma irradiation are nearly identical.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99057
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