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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5564-5569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spontaneous Raman spectra of the chalcopyrite structure crystal CuAlS2, which is promising for nonlinear optical applications, has been investigated at 8 and 300 K. The main aim of this study is to compare the absolute spontaneous Raman scattering efficiency in CuAlS2 crystals with that of their isomorphous analog, zinc-blende structure GaP crystals, known as one of the most efficient materials for Raman amplification. Observation of a high value of absolute scattering efficiency S/L dΩ (where S is the fraction of incident power that scatters into the solid angle d Ω and L is the optical path length with S/L dΩ=9.5×10−5 cm−1 sr−1), together with relatively narrow linewidth (Γ=5.1 cm−1, full width at half maximum at room temperature and Γ=1.5 cm−1 at 8 K for the strongest Γ1 phonon mode of CuAlS2 at 314 cm−1) indicate that CuAlS2 has the highest value of the stimulated Raman gain coefficient gs/I where I is the incident laser power density. The calculated value of this gain is gs/I=2.1×10−6 cm−1/W at 300 K and 5.0×10−6 cm/W, at 8 K for 514.5 nm laser excitation, and is larger than those for the appropriate vibrational modes of various materials (including GaP, LiNbO3, Ba2NbO5O15, CS2, and H2) investigated so far. The calculations show that cw Raman oscillator operation in CuAlS2 is feasible with low power threshold of pump laser. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2768-2770 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a CuInS2xSe2(1−x)-doped glass as an intracavity saturable absorber, passive mode-locking of Nd:YAG and Nd:YAlO3 lasers is obtained. Ultrashort laser pulses are achieved with duration of 16 ps (for Nd:YAlO3 at 1.08 μm) and 36 ps (for Nd:YAG at 1.064 μm), respectively. The intensity dependent transmittance and transient absorption change measurements are performed on CuInS2xSe2(1−x)-doped glasses at 1.08 μm with the use of laser pulses of 15 ps width. The bleaching relaxation time is found to be ∼11 ps. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2542-2544 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 single crystals have been studied employing photoluminescence (PL), optical reflection (OR), optical absorption (OA) and wavelength derivative reflection (WDR) techniques at temperatures from 4.2 to 300 K. Exciton-related peaks were observed in the near-band-edge region of the PL spectra: several narrow lines, with full width at half maximum (FWHM) of about 0.3 meV, and two wider peaks (FWHM about 0.7 meV) at 1.0414 (A) and 1.0449 eV (B). The A and B peaks were also observed in the OR and OA spectra and identified as A and B free excitonic states. The narrow lines were attributed to bound exciton recombination on intrinsic defects. A third exciton resonance (C) was observed in the WDR spectra at 1.2779 eV. The crystal-field and spin-orbit splittings were derived to be 5.3 and 234.7 meV, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin polycrystalline films of CuInxGa1−x Se2 (0⩽x⩽1) were fabricated by pulsed laser evaporation. Results of measurements of the optical properties, photocurrent polarization indicatrices, and spectral dependence of the photoconversion quantum yield of In-p-CuInxGa1−x Se2 structures are discussed. A window effect in the photosensitivity has been observed, and it is concluded that it is possible to use CuInxGa1−x Se2 thin films as photoconverters of solar radiation.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Semiconductors 32 (1998), S. 613-616 
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Using crystals of the compounds CuGaS2 and AgGaS2 and solid solutions based on them, the IR reflectance spectra and the Raman spectra have been studied in polarized light. Values have been determined for the frequencies of the longitudinal and transverse optical phonons, the damping coefficients, the IR intensity, and ɛ 0, and ɛ ∞. The concentration dependences of the indicated parameters have been constructed, and the character of the behavior of the optical vibrations in the solid solutions has been established.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract AgInSe2 thin films on glass substrates have been prepared by pulsed laser deposition. Rectifying heterojunctions with a pronounced photovoltaic effect have been fabricated for the first time by placing such films in optical contact with layered III-VI (InSe, GaSe) semiconductors. The maximum photosensitivity of such heterostructures is 10–103 V/W. It is concluded that the prepared structures can be used as wideband selective photoreceivers.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Optical properties of structurally perfect CuInSe2 single crystals were studied in the temperature range of 4.2–300 K with the use of photoluminescence, optical absorption, optical reflection, and wavelength-modulated optical reflection (WMOR). The intense lines of free excitons A (∼1.0414 eV) and B (∼1.0449 eV) with a half-width of ∼0.7 meV at 4.2 K are found to be related to two extrema of valence band split by a crystal field. The excitons emission line C (∼1.2779 eV) in WMOR spectra are related to a lower valence band split-off by spin-orbit interaction. Within the context of the quasi-cubic Hopfield model, the parameters of valence band splitting ΔCF=5.2 meV and ΔSO=234.7 meV defined by the crystal and spin-orbit interaction, respectively, are calculated. In the region of the fundamental absorption edge, the lines of bound excitons are found with a half-width ∼0.3 meV that is indicative of a high quality of grown CuInSe2 crystals.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics letters 24 (1998), S. 89-90 
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thin films of the ternary compound CuGaTe2 were prepared by pulsed laser-assisted evaporation. Their structure and unit cell parameters were determined by an x-ray method. The transmission spectra near the fundamental absorption edge were used to determine the energies of the interband optical transitions, and the crystal (Δ cr) and spin-orbit (Δ∞) splittings were calculated.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin films of the solid solutions CuIn(TexSe1−x )2 (0〈x〈1) exhibiting chalcopyrite structure were obtained by the method of laser deposition. Using half-transmitting indium layers, Schottky diodes were prepared on the basis of the films obtained. The spectral dependence of the sensitivity as a function of the ratio between Te and Se was investigated by illuminating the structures through the In contact. Analysis of the experimental results showed that the region of spectral sensitivity of such thin-film structures depends on the tellurium content in the CuIn(TexSe1−x )2 layers.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The electrical properties and photoluminescence spectra of single crystals of the ternary compounds CuIn5S8, AgIn5S8 and their solid solutions have been investigated. We have determined the type of conductivity, the mobility, charge carrier concentrations and energies of the radiative transitions in these materials. We have fabricated surface-barrier structures from these single crystals and measured the voltaic photosensitivity.
    Type of Medium: Electronic Resource
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