Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoconductivity induced by single-photon excitation of aromatic molecules in liquid hydrocarbons (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 744-749 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150648a025
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Wide-band frequency response measurements of photodetectors using low-level photocurrent noise detection (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8641-8646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel measurement technique for the wide-band determination of the frequency response of photodetectors. It is based upon the accurate measurement of the photocurrent noise spectra under illumination with a light-emitting diode. The high sensitivity of −200 dBm/Hz within a frequency regime from 10 MHz to 1.6 GHz renders it particularly attractive for investigating the response behavior at low optical input levels and for characterizing frequency-dependent gain phenomena. The practical potential of the method is illustrated by applying it to various types of InGaAs-based photodetectors (p-i-n and avalanche photodiodes and metal-semiconductor-metal photodetectors).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353397
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Plasma enhanced chemical vapor deposited SiO2 layers for passivation of InGaAs:Fe metal-semiconductor-metal photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 945-947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on the passivation and antireflection coating of InGaAs:Fe metal-semiconductor-metal photodetectors using remote plasma-enhanced chemical vapor deposited SiO2 layers are reported. The deposition of SiO2 on the detector surface leads to a reduction of the dark current by nearly two orders of magnitude at 5 V bias. Temperature-dependent measurements of the leakage current characteristics indicate that the Schottky barrier height is substantially lowered near the metallization edges of the reversed biased contact fingers. The effective barrier height in the edge region, which controls the magnitude of the leakage current is determined by activation energy plots to be 0.14 eV for nonpassivated and 0.20 eV for passivated structures, respectively. Apart from the improvement of the dark current characteristics, the SiO2 coating results in a drastic reduction of the photocurrent gain. The long-term stability of the passivation is proved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359025
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Detection of pulse to pulse timing jitter in periodically gain-switched semiconductor lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1971-1973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Methods to assess pulse to pulse timing jitter in periodicallly gain-switched semiconductor lasers are investigated. The power spectrum of the optical pulse train for mutually incoherent fluctuations of the turn-on delay time and the pulse amplitude is calculated. The result shows that a measurement of the power spectrum alone is not sufficient for the characterization of the inherent timing jitter. Additional knowledge of the optical waveform and the transfer characteristics of the detection system is necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101370
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Substructure in short optical pulses from gain-switched semiconductor lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1600-1602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spike-like substructure in picosecond optical pulses from gain-switched multimode injection lasers is analyzed. A theoretical description based on the interference of the randomly phased longitudinal laser modes and the transient shift of the envelope of the mode spectrum under gain-switched operation is presented. Single shot, streak camera records and autocorrelation traces are simulated, describing all essential experimental features of the substructure like its random variation from pulse to pulse and inherent periodicity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102249
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Picosecond spectra of gain-switched AlGaAs/GaAs multiple quantum well lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2263-2265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal waveform of the single longitudinal modes emitted by gain-switched AlGaAs/GaAs multiple quantum well lasers is analyzed by means of a synchroscan streak camera system coupled to a spectrograph. It is found that only 50% of the number of the longitudinal modes contributing to the time-averaged spectrum are present during the first relaxation oscillation. The time-dependent shift of the envelope of the mode spectrum is quantitatively explained by a spectral shift of the gain maximum as a function of the time-varying charge carrier density. The results demonstrate that, for the analysis of transient multimode spectra of gain-switched injection lasers, inclusion of the energy dependence of the gain and gain compression is mandatory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100248
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Turn-on delay time fluctuations in gain-switched AlGaAs/GaAs multiple-quantum-well lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2469-2471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The turn-on delay time jitter in unbiased gain-switched AlGaAs/GaAs multiple-quantum-well lasers is determined by measuring the transient fluctuations of the total emitted power with the use of a fixed-time sampling technique with a picosecond temporal resolution. The turn-on jitter is found to decrease significantly with increasing pumping rate, particularly when the lasers are operated at an excitation level at which only the first relaxation oscillation is emitted. The root-mean-square jitter of the emitted optical pulses decreases from about 20 ps just above the laser threshold to a value of 14 ps at the threshold for the appearance of the second relaxation oscillation. These results demonstrate that an accurate adjustment of the pumping rate is essential for a low-jitter single-pulse operation of the gain-switched lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341025
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Improved performance of large-area InP/InGaAs metal-semiconductor-metal photodetectors by sulfur passivation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1389-1391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on sulfur based surface passivation technique for InGaAs metal-semiconductor-metal (MSM) photodetectors with an InP barrier enhancement layer. We show that excessive leakage current and photocurrent gain, which are the two major performance-limiting factors in MSM detectors, can be largely suppressed by a treatment of the InP surface with ammonium polysulfide. The dark current and photocurrent characteristics of such passivated devices were monitored over a period of half a year and were found to be stable. The improved performance of the device characteristics is explained in terms of a passivation-induced reduction of surface charging effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111916
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Millimeter wave distributed metal-semiconductor-metal photodetectors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3648-3650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and analyze a method for distributed photodetection using waveguide-coupled metal-semiconductor-metal (MSM) photodetectors. The electrode configuration is a coplanar strip waveguide capacitively loaded with the interdigitated MSM structure. The slow wave character of this structure allows for matching the velocity of the guided electrical wave to that of the optical waveguide resulting in virtually capacitance-free photodetection. In the context of actual device structures and operating conditions, the bandwidth limitation due to velocity mismatch and the influence of transmission line loss and dispersion on the high-frequency response are calculated and is found to be close to 1 THz. Thus, the detector structure is suitable for fully exploiting the transit-time-limited bandwidth potential of ≥200 GHz which is attainable by using interdigitated electrodes with ≤0.1 μm spacing and width. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114128
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Transient response of lateral photodetectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2227-2229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional physical device model for characterizing the transient operation of lateral photodetectors is presented. It is based upon a corpuscular approach where the impulse response is constituted by the superposition of a large number of photocurrent pulses originating from spatially distributed discrete electron-hole pairs generated by an optical impulse. The motion of photogenerated carriers and the resulting photocurrent pulses in the external circuit are related by Ramo's theorem which is shown to be fundamental for gaining a correct understanding of the time response of lateral detectors. The accuracy of the predictions obtained from the modeling is underpinned by their excellent agreement with experimental data on the impulse response of InP:Fe/InGaAs:Fe metal-semiconductor-metal detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109424
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...