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  • 1
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5404-5411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe3−xSi1+x films have been grown on Si(111) by codeposition at room temperature. Their structural and electronic properties have been investigated by means of low-energy electron diffraction (LEED), x-ray photoelectron diffraction (XPD), and x-ray photoemission spectroscopy (XPS). These films, with compositions ranging from Fe3Si to FeSi, exhibit a (1×1) LEED pattern. Both XPD and core level binding energy measurements indicate that single Fe3−xSi1+x phases (with 0〈x〈1), without bulk counterpart, can be stabilized by epitaxy on Si(111). The XPD experiment clearly shows that these Fe3−xSi1+x (0≤x≤1) films adopt the same cubic structure. Furthermore, the Si 2p, Fe 2p3/2, and Fe 3s core levels are slightly shifted to higher binding energies resulting from chemical effects and differences in local coordination when going from Fe3Si (DO3) to FeSi (CsCl). Multiplet splittings ΔE3s are observed in Fe 3s core-level XPS spectra for all Fe3−xSi1+x compounds except the FeSi (CsCl) one. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359721
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  • 2
    Electronic Resource
    Electronic Resource
    Defining the quality of a high-Tc superconductor (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1497-1500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare our experimental results obtained for the complex susceptibility of YBaCuO compounds with other results available in the literature concerning YBaCuO as well as other high-temperature superconducting oxides (LaBaCuO, BiSrCaCuO) or other inhomogeneous compounds like the Chevrel phase. We discuss a phenomenological model based on Clem's formulation [Physica C 50, 153 (1988)]. We present a plot of all the experimental collected results, which allows a classification in terms of quality for a large variety of samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344409
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxy on Si (001) 2×1 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7412-7415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial molecular beam epitaxy growth of nanometric Ge layers on Si (001) 2×1 has been investigated, in situ, by x-ray Si 2p photoelectron diffraction and Auger Ge LMM electron diffraction which consist essentially in preferential scattering of electrons in the direction of interatomic axes. Particular attention was paid to measuring the contrasts of this anisotropic emission in the (11¯0) plane as a function of deposition parameters. It can thus be determined how crystalline material quality and epitaxial perfection are affected by the residual pressure below 5×10−8 mbar, the substrate temperature decrease to room temperature, the deposition rate, and the Ge overlayer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354005
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  • 4
    Electronic Resource
    Electronic Resource
    Er/Si (111) interface intermixing investigation using core level photoemission (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103685
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  • 5
    Electronic Resource
    Electronic Resource
    Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111): Photoemission studies (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1760-1762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A good Si epitaxial growth rate on Ge (111) has been achieved at substrate temperatures as low as 350 °C thanks to the use of decomposed disilane in the catalytic chemical vapor deposition (CTL-CVD) method. For substrate temperatures in the (100–200 °C) range, an exposure of the Ge (111) wafer to decomposed disilane led to the formation of an amorphous silicon film. The growth rate of this Si layer was found to be several times higher when using decomposed disilane rather than undecomposed disilane. At substrate temperatures above 400 °C, an interdiffusion of Si into Ge occurred in both cases of disilane and decomposed disilane exposures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104059
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxy of CoSi2 on Si (111) at low temperature (≤400 °C) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1384-1386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of thin CoSi2 films on a Si(111) surface has been studied using surface techniques such as low-energy electron diffraction and photoemission spectroscopy. Various preparation methods at low temperature (≤400 °C) are investigated. Both layer by layer growth and coevaporation invariably exhibit a bulk and surface excess of Si. In contrast a different preparation method where the Co atoms were evaporated onto the Si(111) substrate maintained at ∼360 °C produces CoSi2 films exposing a Co-rich CoSi2 surface without any Si excess in bulk. It is concluded from these experiments that at ∼360 °C diffusion of Si from substrate through the CoSi2 layer is much easier than usually expected and quite sufficient to sustain further CoSi2 growth without any extra Si supply.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100456
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Si1−xGex layers on Si(001) surface, by catalytical decomposition of disilane and germane: Photoemission studies (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1733-1735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex alloys grown by catalytical decomposition of a mixture of disilane and germane on Si(001) at 620 K and room temperature (RT) have been prepared and analyzed in situ with surface techniques such as x-ray and ultraviolet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED), and x-ray photoelectron diffraction (XPD). A comparison is made with the case of an undecomposed gas mixture under the same experimental conditions. We show that films prepared at RT are amorphous. Films prepared at 620 K are well ordered and exhibit sharp 2×1 LEED patterns. Films grown at RT and subsequently annealed at as high as 820 K have a poorer crystalline quality. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115032
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  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature Si3N4 and Ge3N4 growths by Si and Ge surface irradiation with a N2 electron cyclotron resonance plasma: An x-ray photoemission study (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2742-2744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrahigh vacuum compatible electron cyclotron resonance (ECR) plasma source is employed for the first time in studying the surface nitridation with N2 on Si (001)-2×1 at low substrate temperature (Ts=RT). The exposure to the efficiently activated and dissociated nitrogen flux in the microwave plasma is not limited to the silicon surface states but results in the formation of ultrathin dielectric near-stoichiometric Si3N4 layers (∼20 A(ring)) analyzed in situ by x-ray photoelectron spectroscopy (XPS). These films, without hydrogen content and silicon deposit, could easily be grown in few minutes at RT and at relatively low working pressures (∼10−4 mbar in the chamber) without destroying the underlying Si substrate as checked by x-ray photoelectron diffraction (XPD). Composition deviations to the Si3N4 stoichiometry of the grown nitride layers are also discussed in relation with the contamination oxygen content and the contribution of the interface subnitride configurations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105905
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of temperature on the Ge/GaAs(110) interface formation
    Amsterdam : Elsevier
    Surface Science Letters 132 (1983), S. A349 
    Details
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-2584(83)90176-7
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal nitridation of Si(100)-2 x 1 surface by NH"3: XPS results
    Amsterdam : Elsevier
    Surface Science Letters 209 (1989), S. A36-A37 
    Details
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-2584(89)90599-9
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