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  • 1
    Electronic Resource
    Electronic Resource
    Stress evolution due to electromigration in confined metal lines (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3790-3799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354073
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous deuterium trapping in evaporated iron films studied by positron annihilation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7349-7353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Forward recoil energy spectroscopy showed that thin, evaporated Fe films trap anomalously large quantities of deuterium. Positron annihilation was used to investigate how the film microstructure influenced this trapping. Polycrystalline films trapped more deuterium and contained more open volume defects than single-crystal films. Annealing reduced both trap and open volume defect concentrations. These results strongly suggest that coalescence voids produced during the thin-film deposition were the sites for the trapping of deuterium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349754
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  • 3
    Electronic Resource
    Electronic Resource
    Stress-induced nucleation of voids in narrow aluminum-based metallizations on silicon substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6774-6781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates thermal stress-induced voiding, and void nucleation in particular, in narrow, passivated aluminum-based metallizations on silicon substrates. After excursions to a higher temperature, the thermal stress is tensile, and increases during cooldown to room temperature, after which it relaxes with time. Experiments conducted on two aluminum alloy metallizations suggest that stress-induced void nucleation is a one shot phenomenon during cooldown from the heat treatment temperature. Further, the high thermal stresses present, and the strong constraints against deformation provided by the substrate and passivation layer, make void nucleation unique in narrow passivated metallizations. Finally, voids always appear to be connected to grain boundaries. The above experimental evidence and theoretical considerations together suggest that grain boundary sliding is the main mechanism facilitating void nucleation in passivated aluminum alloy metallizations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349852
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  • 4
    Electronic Resource
    Electronic Resource
    The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7528-7532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-Z, metal/metal systems which also show this tendency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348929
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  • 5
    Electronic Resource
    Electronic Resource
    On the validity of a thermal spike mixing model for low-Z metals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1364-1366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature ion beam mixing rates for Cu-Ti, Ni-Ti, and Fe-Ti layers have been found to be significantly lower than predicted by a popular semi-empirical thermal spike model. It has been proposed that the unavoidable hydrogen contamination of the as-deposited Ti films may have reduced the mixing rates, but the measurement of even lower mixing rates for Fe-V and Fe-Co bilayers shows the discrepancy to be more fundamental. Still, a systematic dependence on heat of mixing suggests that some sort of diffusional (thermal spike?) mechanism is involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346685
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-induced formation of stable and metastable phases in the Y-Si system (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bilayers of yttrium and amorphous silicon have been irradiated with 60 keV inert ions. Between liquid-nitrogen temperature and 100 °C, ion mixing resulted in an amorphous alloy of Y and Si. For temperatures of 125–190 °C, we observed formation of the YSi phase. YSi is not formed during thermal anneals of bilayers. Ion mixing at higher temperatures (≥205 °C) results in the formation of the stable YSi1.7 phase. Such sequential silicide formation has not been observed for comparable rare-earth silicides. The minimum temperatures for ion-induced YSi1.7 formation agrees with the prediction by a simple model which correlates vacancy mobility to phase transformation. The YSi formation temperature is associated with the onset of radiation-enhanced diffusion. This temperature does not correlate well with the prediction of the model, but agrees with a scaling based on the average cohesive energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105076
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  • 7
    Electronic Resource
    Electronic Resource
    Do thermal spikes contribute to the ion-induced mixing of Ni into Zr, Ti, and Pd? (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1407-1409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature ion beam mixing rates for Ni-Ti, Zr-Ni, and Pd-Ni bilayers significantly exceeded binary collision estimates, and appeared quite sensitive to thermodynamic driving forces. In the absence of a temperature dependence such a behavior is commonly ascribed to interdiffusion within thermal spikes. However, the Ni-Ti mixing rate was seen to vary linearly with nuclear damage energy for irradiation with 600 keV Xe, Kr, or Ar, 300 keV Ne or N, or 200 keV N ions, or 1 MeV Au ions (literature value). This excludes overlapping thermal spikes. An expression was derived for mixing due to nonoverlapping thermal spikes, but this could also not explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103449
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of multiple precipitate layers in MeV Au++-implanted silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1796-1798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103103
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  • 9
    Electronic Resource
    Electronic Resource
    Au-Ag ion mixing rate—disagreement with theory resolved (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2497-2499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the low-temperature mixing of several 5d–4d bilayers by 600 keV Xe ions have strongly supported the assumption of a thermal spike mechanism. Quite disturbingly, however, the Au-Ag mixing rate appeared to exceed theoretical predictions by about a factor of 3. A closer examination of this system shows the discrepancy to be caused by the formation of a strongly nonuniform Au surface structure during irradiation. An improved value for the mixing rate is in reasonable agreement with predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102010
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  • 10
    Electronic Resource
    Electronic Resource
    Kinetics of thermal stress induced void growth in narrow aluminum lines (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1341-1343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1-μm-wide Al lines were passivated at 300 °C and annealed at 400 °C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105302
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