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  • 1
    Electronic Resource
    Electronic Resource
    Ion implantation of Si and Se donors in In0.53Ga0.47As (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 351-354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation of Si and Se donors in In0.53Ga0.47As is reported. Both room-temperature and elevated temperature (200 °C) implants are performed. Rapid thermal annealing as well as conventional furnace anneals have been used. Both species yield relatively shallow profiles with peak electron concentrations ∼1×1019 cm−3 and with sheet resistance less than 20 Ω/sq. Our results indicate that elevated temperature implants are effective in reducing implant damage and are important for heavy ions like Se+ to achieve high activation and mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334813
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Gain recovery time of traveling-wave semiconductor optical amplifiers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 454-456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a mechanism which may shorten the gain recovery time in semiconductor optical amplifiers. The mechanism is carrier diffusion from nearby carrier storage regions (carrier reservoirs), which enhances the carrier recovery process in the active region and consequently reduces the gain recovery time. Bias-independent recovery times as short at 100 ps are demonstrated in a 1.3-μm traveling-wave amplifier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100950
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Picosecond study of near-band-gap nonlinearities in GaInAsP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2619-2628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From picosecond pump-probe and forward degenerate four-wave mixing (DFWM) experiments, we obtain the near-band-gap nonlinear absorption and refraction properties of GaInAsP for λ∼1.5 μm. Using a mode-locked color center laser, the nonlinear signals are studied in room-temperature samples as a function of time and wavelength for different pump energies and for materials with different band-gap energies. Nonlinear absorption cross sections σeh as large as −5.7×10−15 cm2 are obtained from the pump-probe results, while effective nonlinear cross sections σeff as large as 7.8×10−16 cm2 (corresponding to a steady state ||χ(3)||∼3.8×10−3 esu for a 20-ns relaxation time) are measured in the DFWM experiments. The spectral behavior of the data shows that above the band gap, the nonlinearity is due both to band filling and screening of excitonic effects. However, the effectiveness of the screening diminishes within one or two plasma frequencies of the band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336989
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Resistance and mobility changes in InGaAs produced by light ion bombardment (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 665-667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured sheet resistance and mobility changes for a series of In0.53Ga0.47As layers as a result of hydrogen, boron, and beryllium implantation. We find that boron and beryllium implantation can produce a two order-of-magnitude increase in sheet resistance due mainly to a decrease in mobility accompanied by a smaller decrease in the sheet carrier concentration. Hydrogen implantation results in a decrease in sheet resistance due to an increase in electron concentration accompanied by only a small mobility decrease. The increase in sheet resistance due to boron and beryllium implants is not large enough to have obvious application for device isolation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337410
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Study of carrier dynamics in InP:Fe using time-resolved infrared reflection and transmission (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dynamics of photogenerated carriers in the semiconductor InP:Fe, using 2 ps time-resolved infrared (IR) reflection and transmission. We analyze the reflection data in a new way: the transient signal is related to the Fourier transform of the injected carrier depth profile. Because of this sensitivity to the depth profile, time-resolved IR reflection is a unique tool for studying carrier dynamics and is potentially better than visible reflection or Raman scattering. We use the sensitivity of the IR reflection here to test the validity of the standard one-dimensional ambipolar diffusion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106458
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  • 6
    Electronic Resource
    Electronic Resource
    Hamiltonian spatial structure for three-dimensional water waves in a moving frame of reference (1994)
    Springer
    Journal of nonlinear science 4 (1994), S. 221-251 
    Details
    ISSN: 1432-1467
    Keywords: Hamiltonian structure ; water waves ; relative equilibria ; signature ; eigenvalue collisions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Notes: Summary The governing equations for three-dimensional time-dependent water waves in a moving frame of reference are reformulated in terms of the energy and momentum flux. The novelty of this approach is that time-independent motions of the system—that is, motions that are steady in a moving frame of reference—satisfy a partial differential equation, which is shown to be Hamiltonian. The theory of Hamiltonian evolution equations (canonical variables, Poisson brackets, symplectic form, conservation laws) is applied to the spatial Hamiltonian system derived for pure gravity waves. The addition of surface tension changes the spatial Hamiltonian structure in such a way that the symplectic operator becomes degenerate, and the properties of this generalized Hamiltonian system are also studied. Hamiltonian bifurcation theory is applied to the linear spatial Hamiltonian system for capillary-gravity waves, showing how new waves can be found in this framework.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02430633
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  • 7
    Electronic Resource
    Electronic Resource
    Absolute and convective instabilities of temporally oscillating flows (1997)
    Springer
    Zeitschrift für angewandte Mathematik und Physik 48 (1997), S. 290-309 
    Details
    ISSN: 0044-2275
    Keywords: Key words. Oscillatory flows, unstable wavepackets, signalling, Laplace-Fourier transform, Floquet theory.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Notes: Abstract. The theory of absolute and convective instabilities is extended to the spatially homogeneous, temporally oscillating case. A linear initial-boundary-value problem for small localised disturbances superimposed on an oscillatory basic state is treated by applying Fourier transform in space, Floquet decomposition in time and Laplace transform in time. The dispersion relation function of the problem is given in terms of the temporal Floquet exponents. The asymptotic evaluation of the solution, expressed as an inverse Fourier-Laplace integral, is obtained by applying the formalism developed in the stationary case. A collision criterion for the absolute instability and a causality condition for spatially amplifying waves are formulated in terms of the temporal Floquet exponents. We show that the oscillatory part of the asymptotics of wave packets and spatially amplifying waves is generally quasi-periodic in time. The theory is illustrated with two examples. In the first one, a scalar parabolic PDE is investigated ompletely on absolute instability. Second example treats exact oscillating solutions of the non-linear Schrödinger equation. We show that all such solutions are absolutely unstable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00001477
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