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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3077-3081 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma density in an expanding thermal plasma was determined using planar Langmuir probe measurements. The arc plasma was operated at low flow (500 standard cm3 per minute). It is shown that the decrease of density with increasing distance from the nozzle of the arc in an argon plasma can be explained by diffusion away from the expansion axis. The determined decay length is 10 cm. In the case that nitrogen is injected in the arc, the plasma density is lowered considerably due to charge exchange and dissociative recombination in the expansion. Because of the low electron density (1017 m−3) at a partial nitrogen flow larger than 10%, the dissociative recombination becomes slow. The main loss process of N2+ ions in this case is diffusion away from the plasma axis. The effective decay length found in the nitrogen plasma is 9 cm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1312-1324 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission and absorption spectroscopy and double Langmuir probe diagnostics have been applied to measure the plasma parameters of an expanding magnetized hydrogen plasma jet. The rotational temperature of the excited state H2(d2Πu) has been determined by analyzing the intensity distribution of the spectral lines of the Fulcher-α system of H2. The gas temperature in the plasma, which is twice the value of the rotational temperature is equal to (approximately-equal-to) 520 K. Several clear indications of presence of the "hot'' electrons have been observed in the plasma: (1) Langmuir probe measurements (Te(approximately-equal-to)1.4 eV), (2) appearance of the Fulcher-α system of H2 (excitation potential ΔE=13.87 eV), (3) low rotational temperature (T*rot(approximately-equal-to)260 K) of the excited H2(d3Πu) molecules, (4) local excitation in the plasma of Ar I(ΔE=15.45 eV), and Ar II(ΔE=19.68 eV) spectral lines, (5) local excitation in the plasma of He I(ΔE=23.07 eV and ΔE=24.04 eV) spectral lines. Optical actinometry has been applied to measure the absolute density of hydrogen atoms and hydrogen dissociation degree in the plasma. The measured absolute density of hydrogen atoms are in the (1–1.4)×1020 m−3 range, and the corresponding dissociation degree of the hydrogen plasma is in the range of 8%–13%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 491-493 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fourier transform infrared spectrometry, visual transmission spectroscopy, and in situ ellipsometry have been performed on plasma beam deposited (PBD) amorphous hydrogenated silicon layers. From these measurements refractive index at infrared wavelengths and at 632.8 nm, the optical band gap and the hydrogen content of the layers have been determined. The hydrogen concentration of the layers varies between ∼9 and 25 at. %. It was found that the refractive index decreases more with hydrogen concentration in the layer than predicted by theoretical calculations assuming tetrahedral structures. The band gap of the material remains constant at ∼1.72 eV for the range of hydrogen contents measured. The resonance frequency of the SiH stretching mode (around 2000 cm−1) increases with increased hydrogen content. This is additional evidence to support the assumption that clustered SiH (SiH on voids) does not have its stretching mode near the 2100 cm−1 SiH2 peak. From the results presented it is concluded that PBD layers show behavior similar to plasma enhanced chemical vapor deposition layers with respect to the hydrogen content in the layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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