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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed systematical investigations of intermixing effects in In0.53Ga0.47As/InP single quantum wells induced by 30-keV Ar+-ion beam implantation with doses ranging from 1012 to 1014 cm−2 and a subsequent rapid thermal annealing (RTA) at temperatures between 600 and 900 °C. After implantation and RTA at 600 °C we observe a significant increase of the photoluminescence emission energy of about 60 meV in comparison with unimplanted heterostructures, indicating that the intermixing is determined by implantation. For RTA above 850 °C, in contrast, the energetic shifts up to 200 meV observed for the implanted samples are similar to the shift in unimplanted samples, indicating a predominant contribution of thermal interdiffusion. The significant decrease of Ga concentration after interdiffusion is confirmed quantitatively by Raman measurements.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental characterization of magnetic anisotropy, coercive field, and anisotropy dispersion of sputtered Fe/CoNbZr and Fe/Ag/CoNbZr sandwiches were carried out by transverse biased initial susceptibility (TBIS) measurements with a magneto-optic Kerr effect at both film/air and glass/film interfaces. Three different behaviors have been observed depending on the range of magnetization fluctuation. The results indicate that Fe grains play a fundamental role in the type of the dispersion (long range or short range). The results obtained from the coercive field and from x-ray diffractograms agree with those obtained by TBIS. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For thin films with very well defined uniaxial anisotropy, initial permeability spectra in the hard direction may be well described by Landau–Lifshitz theory that, in the low frequency range, is reduced to μi=4πMs/Hk. But the switching process of the magnetization becomes more complex when it is dominated by local variations of the anisotropy, what is known as magnetization ripple. Then, initial permeability at low frequency may be expressed as μi=4πMs/Heff. Here, effective field Heff is, from ripple theory: Heff=Hk(1+b+c), the terms b and c being additional anisotropy fields due to short and long range magnetization fluctuations. Measurements of Hk, b, and c can be obtained from the transverse bias permeability that has been measured along easy and hard axis by transverse Kerr effect. We obtain values of b+c between 0.04 and 0.30, what imply a reduction of permeability between 4% and 30% due to the dispersion of the anisotropy. Saturation magnetization was measured using a VSM and also with a computer aided hysteresismeter. Then, initial permeability was measured along hard axis using an inductive system previously described. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition and temperature dependence of electrical resistivity were studied for a series of amorphous (Co93Zr7)100−xNdx for x〈3.4 and for a temperature range between 77 and 300 K. The films were deposited by rf sputtering. Measurements of electrical resistivity were performed by the standard four probe technique with ac currents of 10 mA. The rate of heating and cooling was 1 K/min. The electrical resistivity is very sensitive to the presence of Nd ions, as the resistivity clearly increases with a very slight increase of Nd content. The temperature dependence of resistivity does not obey the T2 law predicted by the diffraction model as proposed by Meisel and Cote but follows very nicely the law ρ(T)=aT3/2−bT+c, a result also found for amorphous Gd–Co. The first term corresponds to the electron scattering from the magnetic spin and the second term to the electron scattering from the disordered configuration of atomic potentials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3168-3174 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The induced in-plane and local magnetic anisotropies of rf sputtered (Co93Zr7)100−xREx thin films were investigated as a function of RE content for RE=Pr, Nd, and Tb by transverse biased initial susceptibility measurements at both film/air and glass/film interfaces. The deposition was performed in a magnetic field. The films exhibit a very well defined in-plane anisotropy with negligible long-range fluctuations and a small coercive field Hc, in accordance with the experimental data. The overall variations of the transverse susceptibility are related to the ripple. The variations of the local anisotropy with composition were measured. Both the induced anisotropy Ku and the local anisotropy Kloc increase with the increasing amount of RE in the layers. A clear relationship between Ku and Kloc could be established. The results are discussed in terms of the single-ion anisotropy of the rare earth. While the value of Ku is the same at both interfaces, the ripple constants were found to be slightly different. This last result is believed to be related to some local defects, the origin of which is also suggested. Also the coercive force is discussed and explained in terms of a theoretical model. © 1996 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse biased initial susceptibility (TBIS) measurements were made using a magneto-optical Kerr effect system on samples that exhibited an in-plane and a perpendicular anisotropy. A change in the slope of both the inverse transverse susceptibility and the hysteresis loop is observed at a certain value of the applied in-plane field Hs. At values of the applied field higher than Hs the magnetization lies in the plane of the film; at values lower than Hs an out-of-plane component appears. By performing TBIS measurements we can also detect different micromagnetic phases magnetically uncoupled with different values of the anisotropy field. The occurrence of a downwards curvature in the inverse susceptibility when the dc field is applied along the hard axis together with the multiple minima when the dc field is applied along the easy axis can be explained by the existence of weakly coupled micromagnetic phases. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4496-4500 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly strained Al1−yInyAs/Ga1−xInxAs multiple quantum wells have been grown by atomic layer molecular beam epitaxy on [001]-GaAs substrates. Raman scattering and x-ray diffraction techniques have been used to determine layer composition and strain for a wide range of In concentration (0≤x≤0.44). When a thick buffer layer of AlInAs is used, commensurate growth of the quantum wells takes place if the In content of the barriers equals that of the buffer layer. Then the strain is only accumulated in the wells. The GaInAs wells can be either under biaxial tension or compression depending on the relative In content in wells and barriers.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation-doped GaAs/AlGaAs quantum wires have been fabricated using electron-beam lithography followed by electron-cyclotron resonance reactive ion etching to selectively deplete the electron gas. This technique has the advantages of low damage to the quantum well, strongly anisotropic etching, and reproducible control over the etch depth. The quantum wires exhibit high photoluminescence efficiencies when etched as close as 200 A(ring) to the electron gas. The fundamental gaps show the large optical red shifts associated with strongly spatially indirect transitions. The spacings between one-dimensional subbands determined from inelastic light scattering measurements are larger than 2 meV.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4124-4126 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E2 mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5×1018 cm−3 both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3540-3542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the carrier and light trapping in GaInAs/AlGaAs single-quantum-well laser structures by means of time-resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential. © 2000 American Institute of Physics.
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