Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4967-4971 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The formation of three precipitated phases of Co2+ in NaCl, observed in as grown samples and after quenching from different temperatures, has been put in evidence by means of low temperature optical absorption and Raman spectroscopy. As grown samples show the presence of CoCl2 precipitates; and in quenched samples a tetrahedrally coordinated phase (probably Na2CoCl4) and the octahedrally coordinated Suzuki phase CoNa6(D'Alembertian)Cl8 have been found. Crystal field assignments of the Co2+ ions in the different crystalline phases, together with the B and Dq values, are also given. Finally, a comparative discussion on the different behavior of Co2+ and Ni2+ in their respective precipitates is made.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4496-4500 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly strained Al1−yInyAs/Ga1−xInxAs multiple quantum wells have been grown by atomic layer molecular beam epitaxy on [001]-GaAs substrates. Raman scattering and x-ray diffraction techniques have been used to determine layer composition and strain for a wide range of In concentration (0≤x≤0.44). When a thick buffer layer of AlInAs is used, commensurate growth of the quantum wells takes place if the In content of the barriers equals that of the buffer layer. Then the strain is only accumulated in the wells. The GaInAs wells can be either under biaxial tension or compression depending on the relative In content in wells and barriers.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed systematical investigations of intermixing effects in In0.53Ga0.47As/InP single quantum wells induced by 30-keV Ar+-ion beam implantation with doses ranging from 1012 to 1014 cm−2 and a subsequent rapid thermal annealing (RTA) at temperatures between 600 and 900 °C. After implantation and RTA at 600 °C we observe a significant increase of the photoluminescence emission energy of about 60 meV in comparison with unimplanted heterostructures, indicating that the intermixing is determined by implantation. For RTA above 850 °C, in contrast, the energetic shifts up to 200 meV observed for the implanted samples are similar to the shift in unimplanted samples, indicating a predominant contribution of thermal interdiffusion. The significant decrease of Ga concentration after interdiffusion is confirmed quantitatively by Raman measurements.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4124-4126 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E2 mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5×1018 cm−3 both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3540-3542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the carrier and light trapping in GaInAs/AlGaAs single-quantum-well laser structures by means of time-resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation-doped GaAs/AlGaAs quantum wires have been fabricated using electron-beam lithography followed by electron-cyclotron resonance reactive ion etching to selectively deplete the electron gas. This technique has the advantages of low damage to the quantum well, strongly anisotropic etching, and reproducible control over the etch depth. The quantum wires exhibit high photoluminescence efficiencies when etched as close as 200 A(ring) to the electron gas. The fundamental gaps show the large optical red shifts associated with strongly spatially indirect transitions. The spacings between one-dimensional subbands determined from inelastic light scattering measurements are larger than 2 meV.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 11 (1981), S. 454-458 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Raman spectroscopy has been used to characterize various MoO3/γ-Al2O3 and CoO (or NiO)-MoO3/γ-Al2O3 catalysts containing 12 wt% MoO3 and 3 wt% CoO (or NiO) prepared by different methods. No significant differences between samples prepared by the wet impregnation and the pore volume method could be observed in molybdena-supported catalysts; in these samples the majority of Mo is present as isolated distorted MoO42- tetrahedra due probably to a low coverage of the alumina surface (SBET=240 m2 g-1). Addition of NiO to the molybdena-supported catalysts seems to cause only a slight increase in the distortion and interaction between MoO42- species. In contrast, CoO addition to the molybdena-supported catalysts changes considerably the spectra features, suggesting that the Mo species are highly distorted, presumably in different surroundings on the alumina surface, due to the strong interaction of Co with Mo species. However, simultaneous impregnation of both MoO3 and CoO or NiO results in a more regular arrangement of Mo species and an increase in formation of polymeric Mo species, particularly with Co-containing catalyst, where a relative higher degree of polymeric aggregation may occur.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 18 (1987), S. 485-491 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The Raman and infrared spectra of NiCl2·6H2O, NiCl2·6D2O, CoCl2·6H2O, CoCl2·6D2O and CoBr2·6H2O single crystals have been measured in the range 3600-30 cm-1 (Raman) and 3800-400 cm-1 (IR). The water internal modes have been best assigned for NiCl2·6H2O, including Fermi resonance effects. The corresponding Raman intensities have been interpreted in terms of the free molecule Raman tensors. Among the lattice vibrations, the metal halide and metal-water stretchings, and also the librations of the MX2·4H2O octahedra, have been identified and assigned.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 10 (1981), S. 77-81 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The dependence of the first order Raman scattering efficiency of CaF2, SrF2, BaF2 and diamond on photon energy ωL has been measured with different techniques. We find that in the visible these cross-sections increase with ωL much faster than ωL4. This result has important implications as CaF2, for instance, is usually used as a standard scatterer in resonant Raman experiments, with the assumption that its efficiency is excatly proportional to ωL4. The possible sources of these anomalies are discussed.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...