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  • 1
    Electronic Resource
    Electronic Resource
    Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2163-2168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion length of minority carriers in n-type floating-zone Si samples is obtained with the electron-beam-induced current technique in planar configuration. The charge collection current data as a function of the beam-junction distance are analyzed on the basis of the "moment method'' developed by Donolato [C. Donolato, Solid-State Electron. 28, 1143 (1985)], which is based on the calculation of the variance of the derivative of the current profile. With respect to other methods reported in literature, this has the advantage that it requires no assumptions on the surface recombination velocity and thus provides a diffusion length value free from its influence. The data are also analyzed with the asymptotic method, which requires conventional assumptions on the surface recombination velocity. The comparison between the results has allowed us to test the capabilities of the above-mentioned method. Particular attention is paid to the injection level and its influence on bulk and surface properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349454
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  • 2
    Electronic Resource
    Electronic Resource
    Role of impurities on diffusion-induced defective states (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5622-5627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defective states induced in floating zone Si by the heavy diffusion of dopants have been investigated by means of the electron beam-induced current method. By measuring the minority carrier diffusion length with the first order moment method, and by directly imaging the defects, their electrical activity has been analyzed. The diffused samples have subsequently been dry oxidized, so that the evolution of the electrical and morphological properties of the induced defects could be followed. Two sets of samples, one diffused with B and the other with B and Al, have been investigated in order to study the effects of the presence of Al. Significant improvements in the diffusion length have been observed in samples where Al had been codiffused, thus providing indication for the role played by Al on the electrical activity of bulk defective states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351962
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  • 3
    Electronic Resource
    Electronic Resource
    Double-junction effect in proton-irradiated silicon diodes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2013-2016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article concerns the existence of a double-junction effect in proton-irradiated silicon p+-ν-n+ (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p+-ν-n+ diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495077
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  • 4
    Electronic Resource
    Electronic Resource
    Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 987-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2×1017, 4.5×1017, and 1.5×1018 cm−3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357783
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  • 5
    Electronic Resource
    Electronic Resource
    The EL2 trap in highly doped GaAs:Te (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6592-6595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated highly doped GaAs:Te at different doping concentrations ((approximately-greater-than)1017 cm−3) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360480
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  • 6
    Electronic Resource
    Electronic Resource
    Deep energy levels in CdTe and CdZnTe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2121-2126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366946
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  • 7
    Electronic Resource
    Electronic Resource
    Comparison of electrical and luminescence data for the A center in CdTe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3510-3512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical and optical properties of the deep levels responsible for the 1.4–1.5 eV luminescence band usually observed in II–VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd0.8Zn0.2Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at Ev+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2×10−16, 1×10−16, and 4×10−17 cm2, respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at Ev+0.12 eV as being a VCd+ClTe donor–acceptor pair center. All three levels may be present in the 1.4 eV luminescence band. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117228
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  • 8
    Electronic Resource
    Electronic Resource
    Charge collection mapping of the back-transfer process in Er-doped silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3585-3587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge collection analyses have been carried out on Er-doped silicon to investigate the excitation and de-excitation mechanisms of the Er3+ ion related to the λ=1.54 μm luminescence. Carrier recombination and trapping at the defective states induced in the material by the presence of Er play a significant role in the excitation of the Er3+ ion and in its nonradiative decay by the energy back-transfer process. We have obtained a two-dimensional map of the lattice sites where the back-transfer process occurs, and provided experimental proof of the cooperation of two different defects in the excitation and de-excitation processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126714
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  • 9
    Electronic Resource
    Electronic Resource
    On the degradation of the ebic images of silicon
    Amsterdam : Elsevier
    Ultramicroscopy 12 (1983), S. 109 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(83)90345-5
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of bulk and surface transport properties by photocurrent spectral measurements (2000)
    Springer
    Applied physics 71 (2000), S. 305-310 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 27.20.-i; 72.20.Jv; 72.40.+w
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Reliable minority carrier diffusion length and surface recombination velocity values have been obtained from stationary photocurrent measurements. A modified surface photovoltage method has been used to determine diffusion lengths longer than the wafer thickness in high-purity Si, whereas the spectral variation of the photocurrent has been employed to measure the surface recombination velocity. The novelty presented in this paper is that a Schottky diode has been employed in both the methods to collect generated charged carriers. Moreover the same Schottky diode has been employed in both the methods in order to avoid any a priori assumptions on the material transport parameters. This combined application of the two methods at the same device enables the determination of highly reliable results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000528
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