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  • 1
    Electronic Resource
    Electronic Resource
    Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2163-2168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion length of minority carriers in n-type floating-zone Si samples is obtained with the electron-beam-induced current technique in planar configuration. The charge collection current data as a function of the beam-junction distance are analyzed on the basis of the "moment method'' developed by Donolato [C. Donolato, Solid-State Electron. 28, 1143 (1985)], which is based on the calculation of the variance of the derivative of the current profile. With respect to other methods reported in literature, this has the advantage that it requires no assumptions on the surface recombination velocity and thus provides a diffusion length value free from its influence. The data are also analyzed with the asymptotic method, which requires conventional assumptions on the surface recombination velocity. The comparison between the results has allowed us to test the capabilities of the above-mentioned method. Particular attention is paid to the injection level and its influence on bulk and surface properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349454
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5964-5968 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion length and surface recombination velocity of the minority carriers are determined from electron beam induced current (EBIC) profiles on a semiconductor containing a barrier perpendicular to the scanned surface. The evaluation of both the parameters has been obtained by the procedure called "of the first moments,'' due to Donolato [C. Donolato, Appl. Phys. Lett. 43, 120 (1983)], which is based on the calculation of the first moment about the origin of two induced current profiles. This analysis, based on an exact integral property of the EBIC scans, allows evaluation of the diffusion length and the surface recombination without fitting the experimental profiles. In addition, it is easy to handle and can also be readily applied to real devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350447
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Oblique grain boundaries: Analysis of light and electron beam induced current profiles in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4748-4750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Asymmetrical light and electron beam induced current profiles have been previously attributed to a difference of the diffusion length on the two sides of the grain boundary. We show that this feature is instead due to the grain boundary not being perpendicular to the surface. In this geometry, the equations describing the minority-carrier diffusion are not solvable by analytical procedures. A method for their numerical solution is hereby introduced, fast enough to allow the use of minimization procedures. A good agreement has been found between fitted values of the grain boundary inclination and those directly measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340135
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of bulk and surface transport properties by photocurrent spectral measurements (2000)
    Springer
    Applied physics 71 (2000), S. 305-310 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 27.20.-i; 72.20.Jv; 72.40.+w
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Reliable minority carrier diffusion length and surface recombination velocity values have been obtained from stationary photocurrent measurements. A modified surface photovoltage method has been used to determine diffusion lengths longer than the wafer thickness in high-purity Si, whereas the spectral variation of the photocurrent has been employed to measure the surface recombination velocity. The novelty presented in this paper is that a Schottky diode has been employed in both the methods to collect generated charged carriers. Moreover the same Schottky diode has been employed in both the methods in order to avoid any a priori assumptions on the material transport parameters. This combined application of the two methods at the same device enables the determination of highly reliable results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000528
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    Paper (German National Licenses)
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