Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 205-207
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The spatial mode characteristics of gain-guided broad-area quantum well lasers grown by organometallic chemical vapor deposition were investigated experimentally. GaAs/AlGaAs quantum well lasers grown on 6°-off (100) oriented substrates exhibit excellent material uniformity, which allows study of their modal behavior. Gain-guided broad-area lasers fabricated on such uniform material demonstrate nearly ideal gain-guiding modal behavior. These lasers tend to lase in the fundamental mode near threshold and emit single-lobed far-field patterns. In these well-behaved broad-area lasers, we have identified the mechanism for degradation in the spatial coherence at high pumping levels as the onset of higher order lateral modes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101009
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