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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7684-7686 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x=1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm−1 observed by these authors actually arises from electrolyte absorption. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2788-2790 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrochemical incorporation of hydrogen into n-Si and n-Ge has been studied by Fourier-transform electrochemically modulated infrared spectroscopy. Fresh (111) silicon (resp., germanium) surfaces exhibit a vibrational band at 2080 (resp., 1960) cm−1 corresponding to a surface Si—H (resp., Ge—H) bond perpendicular to the surface. Prolonged cathodic treatment results in a new band at 2000 (resp., 1900) cm−1. The position and polarization dependence of this band indicate that it is associated with hydrogen inside the semiconductor lattice. These observations directly show for the first time that cathodically hydrogenated samples contain a thin, disordered, and highly hydrogenated layer, which is probably responsible for the improvement of the hydrogen evolution kinetics observed on these electrodes.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1121-1123 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-Si/non-liquid electrolyte interfaces have been realized in order to obtain electron accumulation layers of very high concentration at various temperatures. The interface has been characterized by using standard electrochemical measurements and the two-dimensional electron gas has been studied by transconductance and infrared optical absorption measurements. These interfaces are found to exhibit densities as high as 4×1013 electrons cm−2. These results are compared with available data on analogous n-Si/organic-solvent electrolyte interfaces.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 696-706 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic experimental investigation on the infrared (IR) vibrational absorption spectroscopy of the n-Si/acetonitrile interface utilizing the attenuated total internal-reflection geometry in the near-infrared (1.1–5 μm) spectral region. The IR absorption of the interface has been isolated selectively by electromodulation, and studied as a function of modulation potential. The electrochemical behavior of the interface has been checked by current/voltage and impedance measurements. The IR spectra are composed of a broad background and various sharp vibrational peaks. The background can be analyzed as the sum of two contributions: (i) absorption by surface states at shorter wavelengths (〈2 μm), (ii) free-carrier absorption at longer wavelengths. The free-carrier contribution is itself composed of a Drude-like component (proportional to λ3/2) and an interband component. The vibrational peaks can be ascribed to the C≡N, C–H, Si–H, and (Si–)O–H chemical bonds. The shapes and magnitudes of the C≡N and C–H peaks can be quantitatively understood in terms of displaced ions and acetonitrile molecules near the surface upon the electrode potential modulation. The shape of the C≡N peak also gives an indication of a weak interaction of the acetonitrile molecules with the electrode surface. The Si–H and (Si–)O–H peaks can be interpreted in terms of Stark effect modulation of the infrared absorption of these species. The shape of the O–H peak indicates the presence of nonequivalent sites at the interface. Upon the electrode aging and oxidation the magnitude of the Si–H peak decreases and the (Si–)O–H peak increases and correspondingly the surface-state density increases which provides a direct in situ physicochemical information regarding the slow oxidation of the electrode surface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 242-248 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on a newly built infrared spectrometer to be used for vibrational studies at the electrochemical interface. The usual way to select the weak interface absorption consists in changing the electrode potential and measuring the associated change in absorption. However, up to now it was difficult to benefit from both the advantages of using a lock-in detection and Fourier transform spectroscopy. Our apparatus allows simultaneous use of these two techniques. This is achieved by using a slow scan speed (∼6 μm s−1) for the Michelson interferometer. The electrode potential may be modulated at a frequency as low as 100 Hz. The ultimate sensitivity of our apparatus corresponds to a relative change of transmitted light intensity of ΔI/I∼10−6, for a measuring time of 45 min, in the 800–4200 cm−1 range, with a resolution of 25 cm−1. Our ultimate resolution capability is 0.5 cm−1. Data are presented that have been obtained on the n-Si/acetonitrile interface using an attenuated total reflection geometry, which allows further improvement of the performances by one order of magnitude.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 191-193 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a nuclear-magnetic-resonance (NMR) study of the structure of porous silicon. Cross-polarization–magic-angle-spinning 29Si NMR shows that the silicon crystalline structure is preserved in porous silicon and that there are three protonated silicon species at the surface, which are tentatively identified as belonging to different faces. The occurrence of different environments for the surface protons is supported by the heterogeneous 1H NMR line. HF and SiF62− species were detected by 19F NMR in the electrolyte left in the pores. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 103 (1981), S. 7447-7451 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 149-156 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present experimental evidence that the electrochemical rate at a semiconducting photocathode can be affected by the relative spin orientations of the electrons in the semiconductor and of the redox species in the electrolyte. Here the spin orientations are acted upon independently by combination of a large magnetic field and optical pumping of the photoelectrons with circularly polarized light. The effect can be qualitatively understood in terms of the classical models for electrochemical transfer at a semiconducting photoelectrode. The results show that the spin polarization may not be drastically affected upon the electrochemical transfer and may provide a probe for the electrochemical interface.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Electroanalytical Chemistry 114 (1980), S. 299-303 
    ISSN: 0368-1874
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 36 (1975), S. 387-394 
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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