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  • 1
    Electronic Resource
    Electronic Resource
    High-finesse disk microcavity based on a circular Bragg reflector (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We made disk-shaped microcavities of approximately 10 μm2 in area in a GaAs/AlGaAs waveguide structure by etching deep vertical concentric trenches. The trenches form a circular Bragg-like reflector that confines light in the remaining two lateral dimensions. We demonstrate from photoluminescence excited in the waveguide the confinement of discrete disk modes whose wave vector is mainly radial, in contrast with whispering gallery modes. Their quality factors up to Q=650 indicate in-plane reflectivities approaching 90%. In the near infrared, this represents a demonstration of wavelength-scale light confinement based on photonic crystal effects in two dimensions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121880
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  • 2
    Electronic Resource
    Electronic Resource
    Modal analysis of optical guides with two-dimensional photonic band-gap boundaries (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7483-7492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Guided modes propagating in dielectric material surrounded by periodic two-dimensional photonic band-gap material are theoretically studied using the plane-wave expansion and a supercell. Two opposite boundary designs heavily affecting optical feedback at zone edge (Bragg reflection) are investigated. Limits to the validity range of simple bi-mode coupling schemes in these periodic guides are emphasized and coupling coefficients presented in adequate cases. Mode symmetries are studied and related to dispersion and frequency-width relationship. Finally, the smallest guide thickness allowing for a midgap mode is found to be much smaller than the analogous one-dimensional case, raising prospects for enhanced light-matter interaction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362419
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant and nonresonant transmission through waveguide bends in a planar photonic crystal (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2514-2516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the near-infrared transmission spectra of 60° bends defined in two-dimensional photonic crystal waveguides consisting of three missing rows. Two limit cases are studied: a basic nonresonant bend and a bend built around a resonant lozenge cavity, which is found to exhibit peaked transmission. Finite-difference-time-domain simulations show very good agreement with the data allowing general design issues for efficient bends to be discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410338
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  • 4
    Electronic Resource
    Electronic Resource
    Radiation losses of waveguide-based two-dimensional photonic crystals: Positive role of the substrate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 532-534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation losses occurring in photonic crystals etched into planar waveguides are analyzed using a first-order perturbation approximation. Assuming the incoherent scattering limit, the model indicates that losses diminish as the cladding index approaches the core index. A simple scheme is devised to include these losses into purely two-dimensional calculations by using an imaginary index. Such calculations are shown to agree with corresponding experimental transmission through near-infrared photonic crystals, reproducing the contrasting behavior of the "dielectric" and "air" band edges. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125809
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  • 5
    Electronic Resource
    Electronic Resource
    Electron accumulation layer at n-Si/non-liquid electrolyte interfaces (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1121-1123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-Si/non-liquid electrolyte interfaces have been realized in order to obtain electron accumulation layers of very high concentration at various temperatures. The interface has been characterized by using standard electrochemical measurements and the two-dimensional electron gas has been studied by transconductance and infrared optical absorption measurements. These interfaces are found to exhibit densities as high as 4×1013 electrons cm−2. These results are compared with available data on analogous n-Si/organic-solvent electrolyte interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98759
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  • 6
    Electronic Resource
    Electronic Resource
    Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 738-740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119630
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  • 7
    Electronic Resource
    Electronic Resource
    Second harmonic generation as a probe of antiphase domains in layered GaSe thin films on Si(111) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 982-984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second harmonic generation (SHG) at 1.064 μm reflected by thin films (20–60 nm) of layered GaSe epitaxially grown on Si(111) substrates is reported. Comparison with a theoretical calculation, taking into account all interfering waves, is made as a function of growth temperature, evidencing a large discrepancy at lower growth temperature. This discrepancy is attributed to the existence of antiphase domains whose nonlinear polarizations are opposite. Reflected SHG thus allows to probe the existence of an orientational disorder undetectable with electron or x-ray diffraction techniques. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113819
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  • 8
    Electronic Resource
    Electronic Resource
    Radiative recombination in GaAs-AlxGa1−xAs quantum dots (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 946-948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental and theoretical results on the low-temperature luminescence intensity of dry-etched GaAs-AlxGa1−xAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1 μm to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The additional extrinsic effect considered involves carrier diffusion with a surface nonradiative recombination velocity. Combining intrinsic and extrinsic effects and using a surface recombination velocity of ∼105 cm/s for GaAs, we can obtain a good fit to the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107737
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for facets with 〈210〉 azimuth in molecular beam epitaxial growth on patterned GaAs(001) substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1987-1989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present clear experimental evidence that using axes different from the 〈110〉 mirror axes of the (001) GaAs surface generally used for lateral patterning and regrowth of nanostructures yield much better faceted morphologies in molecular-beam epitaxy (MBE) at such scales. Growth on [210] and [12¯0] oriented gratings is shown to yield almost perfect (21n) facets (n≈6). A novel directed one-dimensional growth instability is clearly revealed. The microscopic structure of these facets is discussed as well as implications for the growth of quantum wires and dots in the (In,Ga,Al)As system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107120
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  • 10
    Electronic Resource
    Electronic Resource
    Evolution of 3D growth patterns on nonplanar substrates
    Amsterdam : Elsevier
    Journal of Crystal Growth 114 (1991), S. 619-632 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(91)90408-W
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