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Digitale Medien

Radiative recombination in GaAs-AlxGa1−xAs quantum dots (1992)

Wang, P. D. ; Sotomayor Torres, C. M. ; Benisty, H. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 946-948

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We present experimental and theoretical results on the low-temperature luminescence intensity of dry-etched GaAs-AlxGa1−xAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1 μm to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The additional extrinsic effect considered involves carrier diffusion with a surface nonradiative recombination velocity. Combining intrinsic and extrinsic effects and using a surface recombination velocity of ∼105 cm/s for GaAs, we can obtain a good fit to the data.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.107737

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