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  • 1
    Electronic Resource
    Electronic Resource
    Comment on "Temperature-enhanced electron detachment from C6F−6 negative ions'' [J. Chem. Phys. 98, 7875 (1993)] (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 6981-6982 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The results of three recent, independent measurements of the electron affinity of C6F6 are discussed. These utilize an electron capture detector (ECD), an atmospheric pressure ionization mass spectrometer (APIMS), and a photoelectron spectrometer (PES). Seven independent measurements of the temperature dependence of the ECD response of C6F6 give an average value of 0.86±0.02 eV for the electron affinity of C6F6 in agreement with an earlier published value. The APIMS and PES studies have been recently published and support the ECD value. On this basis, it is suggested that the value of the electron affinity of about 0.5 eV presented in the subject article refers to an excited electronic state of the anion of C6F6. Morse potential energy curves are calculated for four negative ions states of C6F6 using experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467017
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental determination of the electron affinities of nitrobenzene, nitrotoluenes, pentafluoronitrobenzene, and isotopic nitrobenzenes and azulenes (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 2385-2390 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100184a069
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental and analytical properties of 0.2-μm-wide, end-on, multilayer, giant magnetoresistance, read head sensors : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5889-5891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sensing elements which are 0.20 μm wide have been fabricated from giant magnetoresistance material that has four magnetic layers separated by 16–17 A(ring) copper alloy layers. The material has a bulk magnetoresistive coefficient of 12%–15%, and when etched into the 0.2-μm-wide stripes, the stripe material has a shifted linear response range of about 8%, extending from −140 to +140 Oe, for example. Empirical models have been developed for both the bulk material and the stripe material. Using the stripe material model, a numerical analysis was performed for end-on, 0.2-μm-wide, read head sensors in a shielded read head with a 0.25 μm head gap. The analysis shows that with input fields of ±100 Oe from transitions, a peak to peak output of 0.85 mV can be achieved in the assumed read head structure with a 0.20-μm-wide tip. If a 0.25 μm flux gathering tip is used, the peak to peak output can be increased to 1.3 mV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362163
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  • 4
    Electronic Resource
    Electronic Resource
    Planar disorder- and native-oxide-defined photopumped AlAs–GaAs superlattice minidisk lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8204-8209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 A(ring) AlAs, 30 A(ring) GaAs; 100 periods; ∼37 μm diameter) is defined by impurity-induced layer disordering (IILD), followed by wet oxidation (N2+H2O vapor, 400 °C which surrounds the minidisk with a low-refractive-index AlGaAs oxide. The planar minidisks exhibit laser operation at λ∼7540 A(ring), with wider mode separation (Δλ∼13 A(ring)) than disks defined by only IILD (a smaller refractive index step) and cleaved sample edges. The mode separation of Δλ∼13 A(ring) corresponds to disk modes that utilize the perimeter of the oxide-defined disks. In the fabrication of the SL minidisks, IILD forms a structural and doping difference beyond the disk perimeter that acts, in effect, as a p–n junction during etching or wet oxidation. Etch profiles are shown demonstrating this behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362460
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  • 5
    Electronic Resource
    Electronic Resource
    Mode reduction, Q loss, gain saturation, and bandfilling modification of the light versus current characteristics of thin (∼0.9 μm) quantum well heterostructure lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8829-8831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating the effect that cavity length, and thus Q, has upon quantum well heterostructure edge-emitting laser diodes that are reduced to microcavity thickness. The lasers, with reduced mode density and enhanced spontaneous emission, are defined vertically by a Ag top-contact mirror and a closely spaced (∼0.9 μm) high-contrast AlAs native oxide-GaAs distributed Bragg reflecting bottom mirror. For shorter and shorter diode lengths (700→70 μm, and still lesser mode density) the light versus current (L–I) characteristic below threshold is at first steeper and steeper (amplified stimulated emission), until, at a diode length of ∼100 μm, the loss in Q and insufficient gain are manifest as a downward bend in the L–I curve and a shift to higher threshold current where bandfilling to a higher state (shorter wavelength) contributes more gain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362562
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  • 6
    Electronic Resource
    Electronic Resource
    A comparison of the giant magnetoresistance and anisotropic magnetoresistance in Co/Cu sandwich films (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6616-6616 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By a systematic variation of structures, recent measurements conclude the scattering associated with the high resistance giant magnetoresistance (GMR) state occurs within 0.25 nm of the magnetic interface. We have accomplished a similar measurement that does not require such stringent control of the sample structure. Instead, the present work uses measurements of the anisotropic magnetoresistance (AMR) in both the high resistance and low resistance GMR states. The samples are sandwiches of Co/Cu/Co/CoO with Co thicknesses ranging from 1 to 10 nm and Cu thickness of approximately 2.5 nm. The AMR is measured with the Co magnetizations aligned parallel to one another (the low resistance GMR state) and with the Co magnetizations aligned antiparallel to one another (the high resistance GMR state). The data show that the AMR in the antiparallel configuration is less than that in the parallel configuration. An analysis that relates the reduced AMR to the magnetic interfacial region giving rise to the high resistance GMR state indicates the scattering occurs within approximately 0.5 nm of the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358212
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  • 7
    Electronic Resource
    Electronic Resource
    Adsorption and Thermodynamics at the Liquid-Liquid Interface (1965)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 57 (1965), S. 40-52 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50667a006
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetoresistance of ion-beam deposited Co/Cu/Co and NiFe/Co/Cu/Co/NiFe spin valves (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4451-4453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) films produced by ion-beam deposition (IBD) have been studied much less than material produced by other techniques such as magnetron or diode sputtering. Although the process control aspects that are unique to IBD seem ideal for such work, the reported MR values for IBD material are often lower and the material resistivities higher than for conventional sputter-deposited films. We have used a carefully optimized ion-beam process to produce high-quality spin valves of Co/Cu/Co and NiFe/Co/Cu/Co/NiFe. The MR characteristics were studied as a function of the layer thickness for structures that were top pinned with FeMn and bottom-pinned structures grown on NiO. Using a 25 Å thick Cu layer, the MR of top-pinned Co/Cu/Co reached 8.4% over a fairly wide range of top and bottom Co thickness. In contrast, the MR of such films grown on NiO exhibited a strong dependence on the thickness of both Co layers and peaked at 9.9%. The thickness dependence is strong evidence for specular scattering effects at the external interfaces, although it is at least partly an indirect result of the weak exchange bias provided by the NiO in some samples. The symmetric spin valve structure, NiO/Co/Cu/Co/Cu/Co/FeMn, produced our highest MR of 12.1%. The NiFe/Co/Cu/Co/NiFe structures we studied were not optimized for maximum MR, but instead had much different top and bottom NiFe thicknesses as is appropriate in pseudospin-valve material for memory elements. Spin valves of this type had a maximum MR of 7.2%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370371
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  • 9
    Electronic Resource
    Electronic Resource
    High density submicron magnetoresistive random access memory (invited) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5822-5827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal–oxide–semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369931
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  • 10
    Electronic Resource
    Electronic Resource
    Comparison of oxidation methods for magnetic tunnel junction material (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6061-6063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Advances in reducing the resistance and enhancing the magnetoresistance (MR%) of the magnetic tunnel junction (MTJ) material has made it useful for magnetoresistive random access memory as well as magnetic field sensing applications. One of the most important aspects for producing the MTJ material is the method used for forming the tunnel barrier, and its impact on the properties of MTJ such as resistance and area product (RA), MR%, and RA uniformity across a large area. We have explored forming the aluminum oxide tunnel barrier with air; reactive sputtering; plasma oxidation with plasma source; plasma oxidation with power introduced from the target side; and plasma oxidation with power introduced from the substrate side. Our results show that all techniques can be made to work. Plasma oxidation is favored due to its simplicity and manufacturing compatibility. It was also discovered that different oxidation methods used in this study caused little difference in MTJ resistance uniformity. The latter is mainly determined by the Al metal-thickness uniformity. Modeling based on Simmons' theory supports our experimental finding. This illustrates the importance in improving Al metal-film uniformity for producing MTJ with ultra-uniform resistance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372612
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