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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of GaN films by photoreflectance and photocurrent measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7424-7426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360400
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  • 2
    Electronic Resource
    Electronic Resource
    Interface traps in InP/InAlGaAs p-n junctions by metal organic chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5736-5738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the deep levels in the lattice-matched InP/(InAlGa)As heterojunction system. Five p-n junction samples were grown by metalorganic chemical vapor deposition with varied Al composition of 0%, 16%, 36%, 45%, and 55%. A vacancy-related deep electron trap was found at the InP/(InAlGa)As interface. This trap has less concentration in the sample with higher Al composition, and is not observed when Al composition is greater than 55%. Its activation energy within the band gap increases with the increasing Al composition. The trap can be eliminated by rapid thermal annealing at 700 °C. Current-voltage characteristics show that this trap acts as recombination centers under forward bias condition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359217
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  • 3
    Electronic Resource
    Electronic Resource
    Spin reorientation in Nd2(Fe0.9M0.1)14B (M=Co, Ni, Ru) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1990-1994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature magnetic measurements have been made on pseudoternary compounds Nd2(Fe0.9M0.1)14 B(M=Co, Ni, Ru) in order to study the effect of partial replacement of Fe by other transition metals on the spin reorientation phenomena. The spin reorientation temperature (Tsr) decreases from 136 K for ternary Nd2Fe14B to 128 K for 10% Co replacement, to 118 K for 10% Ni replacement, and to 92 K for 10% nonmagnetic Ru replacement. The extrapolated 0 K tilting angle of easy magnetization from the tetragonal c axis decreases from 30° of Nd2Fe14B to 20° for M=Co, 19° for M=Ni, and 18° for M=Ru.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337994
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  • 4
    Electronic Resource
    Electronic Resource
    Direct observation of transferred-electron effect in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2825-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct observation of transferred-electron effect in unintentionally doped GaN epilayers grown by metalorganic chemical vapor deposition. The negative differential resistivity (NDR) was observed from the current-electric field characteristics in GaN using a metal-semiconductor-metal (M-S-M) system. The threshold field for the onset of NDR was independent of the spacing of M-S-M fingers, and was measured to be 1.91×105 V/cm for GaN with an n-type carrier concentration of 1014 cm−3. This value is very close to the value obtained from theoretical simulation. This observation is an experimental evidence of transferred-electron effects in GaN, which is important in understanding GaN energy band structure and in the application of Gunn-effect devices using GaN materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114797
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of metalorganic chemical vapor deposition growth conditions on the GaAs/Ge solar cell properties (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2282-2284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of metalorganic chemical vapor deposition (MOCVD) growth conditions on the properties of GaAs solar cells grown upon Ge substrates, and in particular the GaAs/Ge interface. The interface properties were found to strongly depend on growth conditions. By small changes in the growth temperature, the GaAs/Ge interface was altered from active to passive. Only a narrow temperature window (600–630 °C) for the initial GaAs layer growth gave the passive-Ge junction together with good surface morphology. Accordingly, a high efficiency (19%, AM0) GaAs solar cell was grown by atmospheric pressure MOCVD on a Ge substrate without any junction in the Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104899
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  • 6
    Electronic Resource
    Electronic Resource
    The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3630-3635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) has been achieved by depositing a 2-nm-thick Dy layer onto Si(111) with a 1.5-nm-thick capping amorphous Si (a-Si) layer at room temperature followed by annealing at 700 °C in ultrahigh vacuum. The thickness of the a-Si was selected to be such that the consumption of Si atoms from the substrate is minimized by taking into account the formation of an amorphous interlayer at the Dy/Si(111) interface. Based on our experimental findings, a new mechanism for the formation of pinhole is proposed. The Stranski–Krastanov growth behavior of epitaxial DySi2−x on Si(111) by solid phase epitaxy leads to the apparently random formation of a high density of recessed regions at the initial stage of silicidation. Polycrystalline DySi2−x was found to be present at the areas inside and epitaxial DySi2−x outside the recessed regions. Large numbers of Si atoms from the substrate can therefore diffuse through the recessed regions. As a result, the depth and size of the recessed regions increase with annealing time. Finally, the DySi2−x thin layer inside the recessed regions with higher interface energy is thermally unstable and breaks apart to form pinholes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368538
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  • 7
    Electronic Resource
    Electronic Resource
    Numerical experiments on the stability of unsteady circular Couette flow with random forcing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 1250-1258 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of unsteady circular Couette flow generated by monotonically increasing the angular speed of the inner cylinder is examined through a series of numerical experiments. Random disturbances are imposed continually on the basic state by the inclusion of random forcing terms in the axisymmetric Navier–Stokes equations. Results of the calculations are compared with previous theoretical and experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866291
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  • 8
    Electronic Resource
    Electronic Resource
    The influence of initial condition on the linear stability of time-dependent circular Couette flow (1985)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 28 (1985), S. 749-751 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the starting condition on the linear stability properties of circular Couette flow with a time-dependent inner-cylinder motion is investigated. In addition to the WKBJ approach employed previously by Eagles [Proc. R. Soc. London, Ser. A 355, 209 (1977)] for slowly varying flow, an initial-value method is also used. Results are presented for different stability criteria.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865087
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  • 9
    Electronic Resource
    Electronic Resource
    Maximum stable length of nonisothermal liquid bridges (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 1118-1123 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The maximum stable length of nonisothermal liquid bridges is predicted through a series of numerical computations. The results show that the maximum length of the bridges is less than the Rayleigh limit determined by the isothermal capillary stability analysis. It is enhanced by increasing the strength of the thermocapillary convection, while it is reduced for higher percentage change of surface-tension force or stronger buoyancy-driven convection. For the cases of small parameters, the predictions are in qualitative and quantitative agreement with the previous asymptotic results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.857611
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  • 10
    Electronic Resource
    Electronic Resource
    Fiber-optic liquid contact measurements in pool boiling (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 3043-3047 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two optical techniques for use in detecting liquid contacts in film and transition boiling regimes were developed. The first optical method involves the measurements of liquid contacts on a high-temperature glass boiling surface in a transient experiment. The second technique utilizes a small fiber-optic probe mounted flush on a copper surface. Experiments have indicated the probe is sufficiently fast responding to provide accurate local measurements of liquid to solid contact in film and transition boiling regimes. The relationship between surface superheat and liquid contact time fraction was determined for both methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138989
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